MT46V32M16CY-5B AAT:J TR

The MT46V32M16CY-5B AAT:J TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface in a 60-ball FBGA package. It implements a double-data-rate architecture with internal DLL and source-synchronous DQS to support two data accesses per clock cycle.

Designed for applications that require automotive-grade memory, this device provides DDR performance at up to a 200 MHz clock rate, wide operating temperature range, and AEC-Q100 qualification for reliability in demanding environments.

Key Features

• Core / Architecture Internal, pipelined DDR architecture providing two data accesses per clock cycle; differential clock inputs (CK/CK#) and DLL for aligning DQ/DQS with CK.
• Memory Organization & Capacity 512 Mbit capacity configured as 32M × 16 with four internal banks for concurrent operation.
• Performance & Timing Supports a clock frequency up to 200 MHz (speed grade -5B) with an access time of 700 ps and a word page write cycle time of 15 ns; programmable burst lengths (2, 4, 8).
• Interface & Signal Support Parallel memory interface with bidirectional data strobe (DQS) transmitted/received with data, data mask (DM) support, and byte-level DQS/DM for x16 configuration.
• Power Low-voltage operation with VDD/VDDQ in the 2.3 V to 2.7 V range (datasheet lists typical VDD = +2.5 V ± tolerances for supported timing grades).
• Reliability & Qualification AEC-Q100 qualification and Automotive grade rating; auto-refresh support with 8K refresh cycles and automotive refresh timing of 16 ms / 8192 cycles; operating temperature −40°C to 105°C (TA).
• Package & Mounting 60-ball thin FBGA (60-TFBGA / 60-FBGA, 8 × 12.5 mm) surface-mount package optimized for compact board integration.

Typical Applications

• Automotive Electronics For designs requiring AEC-Q100-qualified DDR memory and extended temperature operation in automotive environments.
• Embedded Systems Compact FBGA package and DDR architecture suit space-constrained embedded designs that need parallel DDR memory.
• Industrial and Harsh-Environment Equipment Extended temperature range and automotive qualification make the device suitable for industrial applications demanding robust memory behavior.

Unique Advantages

• AEC-Q100 Automotive Qualification: Built and specified with AEC-Q100 qualification and a −40°C to 105°C operating range for automotive-grade reliability.
• DDR Performance at 200 MHz: Double-data-rate operation with two data accesses per clock cycle enables high data throughput at the specified clock rate.
• Compact FBGA Package: 60-ball FBGA (8 × 12.5 mm) offers a small board footprint while providing the necessary pinout for x16 DDR operation.
• Low-Voltage Operation: VDD/VDDQ supply range of 2.3 V to 2.7 V supports low-voltage system architectures.
• Flexible Timing and Data Integrity: DLL alignment, DQS source-synchronous capture, data mask (DM) support, and programmable burst lengths help manage timing and data operations.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V32M16CY-5B AAT:J TR provides a compact, automotive-qualified DDR SDRAM solution that combines DDR architecture, robust timing features, and a wide operating temperature range. Its 32M × 16 organization, support for up to 200 MHz clocking, and FBGA packaging make it suitable for embedded and automotive designs that require reliable, high-throughput parallel memory.

Backed by Micron Technology, Inc. product specification and datasheet detail, this device is suited to applications where qualification, small footprint, and predictable DDR timing features are required for long-term deployment in demanding environments.

If you need pricing, availability, or a formal quote for MT46V32M16CY-5B AAT:J TR, submit a request for quote or contact the appropriate sales channel to request a quote or submit a formal RFQ.