MT46V32M16CY-5B L IT:J

IC DRAM 512MBIT PARALLEL 60FBGA
Part Description

IC DRAM 512MBIT PARALLEL 60FBGA

Quantity 357 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeIndustrial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16CY-5B L IT:J – IC DRAM 512MBIT PARALLEL 60FBGA

The MT46V32M16CY-5B L IT:J is a 512 Mbit volatile DDR SDRAM organized as 32M × 16 with a parallel memory interface. It provides a 200 MHz clock interface with a 700 ps access time and a 15 ns write cycle time for word/page operations.

Packaged in a 60-FBGA (8 × 12.5) footprint and operating from 2.5 V to 2.7 V, the device targets designs that require compact, parallel DDR memory with industrial temperature operation from −40°C to 85°C (TA).

Key Features

  • Memory Core  512 Mbit DRAM organized as 32M × 16, providing parallel DDR SDRAM storage for system memory requirements.
  • Performance  200 MHz clock frequency with 700 ps access time and a 15 ns write cycle time (word/page) to support deterministic memory timing.
  • Power  Standard DDR supply range of 2.5 V to 2.7 V, supporting designs that use legacy DDR voltage rails.
  • Package  60-FBGA package (8 × 12.5 mm) for high-density board layouts and compact module integration.
  • Operating Conditions  Specified operating temperature range of −40°C to 85°C (TA) for extended environmental use.
  • Interface  Parallel memory interface compatible with systems designed for SDRAM DDR signaling.

Typical Applications

  • Embedded Systems Memory  Provides 512 Mbit DDR SDRAM for embedded applications that require a parallel memory interface and compact package footprint.
  • Consumer and Industrial Modules  Used in module designs where a 60-FBGA package and 2.5–2.7 V supply are required along with industrial temperature support.
  • Board-Level Memory Expansion  Serves as on-board parallel DDR memory for designs needing defined timing (200 MHz clock, 700 ps access).

Unique Advantages

  • Compact FBGA Packaging: The 60-FBGA (8 × 12.5) package enables higher board density and simplified placement in space-constrained designs.
  • Deterministic Timing: 200 MHz clock frequency with 700 ps access time and 15 ns write cycle time supports predictable memory performance for system timing budgets.
  • Standard DDR Voltage Range: 2.5 V to 2.7 V supply compatibility aligns with common DDR power rails for legacy and existing designs.
  • Wide Temperature Range: −40°C to 85°C (TA) operation supports deployments across extended environmental conditions.
  • Parallel DDR Interface: Parallel memory interface simplifies integration into systems designed around SDRAM DDR signaling.

Why Choose MT46V32M16CY-5B L IT:J?

The MT46V32M16CY-5B L IT:J positions itself as a straightforward, industrial-temperature DDR SDRAM solution delivering 512 Mbit capacity in a compact 60-FBGA package. Its combination of a 200 MHz clock, 700 ps access time, and standard DDR supply range makes it suitable for designs that require deterministic parallel memory behavior and a small board footprint.

This device is appropriate for engineers and procurement teams specifying parallel DDR memory for embedded modules, board-level expansions, or industrial systems where temperature range, package density, and standard DDR electrical characteristics are key selection criteria.

If you need pricing, availability, or to request a quote for the MT46V32M16CY-5B L IT:J, please submit a quote request or contact sales for further assistance.

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