MT46V32M16CY-5B:J TR

The MT46V32M16CY-5B:J TR is a 512 Mbit DDR SDRAM device provided in a 60-ball FBGA package. It implements a double-data-rate (DDR) architecture with a 32M × 16 memory organization and a parallel memory interface.

Designed for board-level memory applications that require a compact, high-density DDR memory, the device offers 200 MHz clock operation (DDR), 2.5–2.7 V supply range, and an operating temperature range of 0 °C to 70 °C.

Key Features

• Core DDR Architecture  Internal, pipelined double-data-rate architecture that performs two data accesses per clock cycle, with differential clock inputs and an on-die DLL for DQ/DQS alignment.
• Memory Organization & Capacity  512 Mbit total capacity arranged as 32M × 16 with four internal banks to support concurrent operations.
• Performance & Timing  Rated for 200 MHz clock frequency (DDR), access time specified at 700 ps and write cycle time (word page) of 15 ns; speed grade -5B supports 5 ns cycle time (CL = 3).
• Data Integrity & Burst Control  Supports bidirectional data strobe (DQS), data mask (DM), and programmable burst lengths of 2, 4, or 8 for flexible transfer sizing.
• Power & I/O  VDD/VDDQ supply range of 2.5 V to 2.7 V with 2.5 V I/O signaling (SSTL_2 compatible as documented in the datasheet).
• Package  60-ball thin FBGA package (10 mm × 12.5 mm footprint option) for compact board-level integration.
• Operating Temperature  Commercial temperature grade with operating range specified from 0 °C to +70 °C (TA).

Typical Applications

• Board-level DDR memory  Acts as a parallel DDR SDRAM memory device where a 512 Mbit, x16 configuration is required at 2.5–2.7 V and 200 MHz operation.
• Compact memory subsystems  The 60-ball FBGA (10 mm × 12.5 mm) package enables higher-density memory implementation in space-constrained PCBs.
• Standard DDR implementations  Implements DDR features from the datasheet (DQS, DLL, programmable burst lengths, four internal banks) for designs following DDR SDRAM architectures.

Unique Advantages

• Double-data-rate throughput: Two data accesses per clock cycle deliver DDR transfer behavior consistent with the device's architecture.
• Speed-grade performance: -5B timing supports 200 MHz clock operation (DDR) and the related timing windows specified in the datasheet.
• SSTL_2 I/O compatibility: 2.5 V I/O signaling and matching VDD/VDDQ supply range simplify interfacing to SSTL_2-compatible systems as documented.
• Compact FBGA footprint: 60-ball FBGA in a 10 mm × 12.5 mm package offers high-density placement for space-constrained designs.
• Flexible burst and bank control: Programmable burst lengths (2/4/8) and four internal banks enable efficient data sequencing and concurrent access patterns.
• Commercial-grade temperature: Specified 0 °C to 70 °C operating range for standard commercial environments.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V32M16CY-5B:J TR positions itself as a compact, parallel DDR SDRAM option for designs that need a 512 Mbit x16 memory with DDR performance at a 200 MHz clock. Its DDR architecture, programmable burst lengths, and four internal banks provide the timing flexibility and concurrent access needed in many board-level memory applications.

With a 60-ball FBGA package footprint and 2.5–2.7 V supply support, this device is suited to compact PCB layouts and systems that require SSTL_2-compatible I/O signaling, all within a commercial operating temperature range.

Request a quote or contact sales to submit an inquiry for MT46V32M16CY-5B:J TR to obtain pricing, availability, and lead-time information.