MT46V32M16FN-5B:C TR

IC DRAM 512MBIT PARALLEL 60FBGA
Part Description

IC DRAM 512MBIT PARALLEL 60FBGA

Quantity 990 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (10x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level5 (48 Hours)RoHS ComplianceN/AREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16FN-5B:C TR – IC DRAM 512MBIT PARALLEL 60FBGA

The MT46V32M16FN-5B:C TR is a 512 Mbit volatile memory device implemented as DDR SDRAM with a parallel memory interface. It is organized as 32M × 16 and delivered in a 60-TFBGA (60-FBGA 10×12.5) package.

Designed for systems that require compact, mid-density parallel DDR memory, the device offers a 200 MHz clock frequency with a 700 ps access time and operates from a 2.5 V to 2.7 V supply over a 0 °C to 70 °C ambient range.

Key Features

  • Core / Memory 512 Mbit DDR SDRAM organized as 32M × 16, providing a single-chip memory solution in a compact package.
  • Performance 200 MHz clock frequency with 700 ps access time and a 15 ns write cycle time (word page) for predictable memory timing.
  • Interface Parallel memory interface suitable for parallel DDR system architectures.
  • Power Operates from a 2.5 V to 2.7 V supply range.
  • Package 60-TFBGA (Supplier device package: 60-FBGA, 10 × 12.5 mm) for board-level space efficiency.
  • Temperature Range Commercial operating ambient temperature specified from 0 °C to 70 °C.
  • Memory Type Volatile DRAM technology (SDRAM - DDR).

Unique Advantages

  • 512 Mbit density in a single package: Provides substantial on-board memory capacity without multi-chip arrays, simplifying layout and BOM.
  • Parallel DDR performance: 200 MHz clock and 700 ps access time support designs that require deterministic parallel memory timing.
  • Compact BGA footprint: 60-FBGA (10×12.5 mm) package reduces board area compared with larger discrete solutions.
  • Standard DDR supply range: 2.5 V–2.7 V compatibility aligns with common DDR power rails for straightforward power design.
  • Commercial temperature rating: 0 °C–70 °C operation matches typical commercial-grade system requirements.

Why Choose MT46V32M16FN-5B:C TR?

The MT46V32M16FN-5B:C TR positions itself as a compact, mid-density DDR SDRAM option for designs requiring a parallel memory interface, predictable timing, and a standard commercial temperature range. Its combination of 512 Mbit capacity, 200 MHz clocking, and a small 60-FBGA package makes it suitable for systems that need to balance memory density and board space.

Use this device in designs where a single-chip volatile memory solution simplifies BOM and layout while providing defined access times and supply requirements. Its clear electrical and thermal parameters support straightforward integration into commercial embedded and electronic systems.

If you need pricing, availability, or a formal quote for MT46V32M16FN-5B:C TR, request a quote or contact sales to submit your inquiry.

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