MT46V32M16FN-5B:F

The MT46V32M16FN-5B:F is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 60-ball FBGA (10 mm × 12.5 mm) package. It implements a double-data-rate architecture with internal pipelining and four internal banks to provide two data transfers per clock cycle.

Targeted for commercial-temperature designs, this device offers 2.5 V-class supply and I/O operation, source-synchronous data capture with DQS, and programmable burst lengths for system memory applications that require standard DDR timing and density.

Key Features

• DDR SDRAM core  Internal, pipelined double-data-rate architecture delivers two data accesses per clock cycle.
• Memory organization  32M × 16 configuration yielding 512 Mbit total density with four internal banks for concurrent operation.
• Data strobes and masking  Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; x16 devices include two DQS signals and two data mask (DM) signals (one per byte).
• Clock and timing  Differential clock inputs (CK/CK#) and DLL alignment of DQ/DQS to CK; part speed grade -5B supports clock rates up to 200 MHz (CL = 3) with a specified access time of 700 ps.
• Programmable burst and refresh  Programmable burst lengths of 2, 4, or 8 and auto-refresh support with 8K refresh cycles.
• Supply and I/O  VDD/VDDQ nominal operation in the 2.5 V range (2.5 V ±0.2 V or 2.6 V ±0.1 V variants listed) and SSTL_2-compatible I/O.
• Package  60-TFBGA (60-ball FBGA, 10 mm × 12.5 mm) supplier device package for board-level integration.
• Temperature range  Commercial operating temperature rating: 0°C to +70°C (TA).

Typical Applications

• Commercial DDR memory subsystems  Use in systems targeting DDR speed grades such as PC3200/PC2700/PC2100 where 512 Mbit density and DDR timing options are required.
• Embedded system memory  Board-level volatile memory for embedded designs needing a 32M × 16 DDR SDRAM device in a compact FBGA package.
• Module or board-level integration  Placement as a parallel DDR memory component on motherboards or expansion modules that accept 60-ball FBGA parts.

Unique Advantages

• Double data-rate throughput: Two data transfers per clock cycle via DDR architecture increases effective bandwidth without changing clock frequency.
• Source-synchronous data capture: Bidirectional DQS and DLL alignment improve timing margin for read and write operations.
• Byte-level control: Data mask (DM) signals (two on x16) enable selective write masking for finer-grained data operations.
• Flexible burst and refresh options: Programmable burst lengths (2, 4, 8) and standard auto-refresh (8K cycles) accommodate varied access patterns and power/refresh management.
• Standard 2.5 V I/O: VDD/VDDQ supply range centered on 2.5 V supports SSTL_2-compatible interfaces for common DDR system designs.
• Compact FBGA footprint: 60-ball FBGA (10 mm × 12.5 mm) enables dense board layout and typical module integration.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V32M16FN-5B:F combines a 512 Mbit DDR SDRAM organization with industry-standard DDR features—DQS, DLL alignment, programmable burst lengths, and auto-refresh—making it suitable for commercial-temperature systems that require parallel DDR memory density in a compact FBGA package. Its 2.5 V-class I/O and documented timing characteristics (up to 200 MHz clock, -5B speed grade) provide a clear specification set for system-level timing and power planning.

This Micron-manufactured device is appropriate for designers and procurement teams seeking a defined 32M × 16 DDR component for board-level integration where commercial temperature operation, established DDR timing modes, and a 60-ball FBGA footprint are required.

Request a quote or submit a pricing and availability inquiry to receive lead-time and volume pricing information for MT46V32M16FN-5B:F.