MT46V32M16FN-6 IT:C TR
| Part Description |
IC DRAM 512MBIT PAR 60FBGA |
|---|---|
| Quantity | 677 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 5 (48 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16FN-6 IT:C TR – IC DRAM 512MBIT PAR 60FBGA
The MT46V32M16FN-6 IT:C TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 60-TFBGA (10 × 12.5 mm) package. It operates with a supply voltage range of 2.3 V to 2.7 V and a clock frequency of 167 MHz, providing synchronous DRAM access for embedded designs.
Key electrical and timing characteristics include a 700 ps access time and a 15 ns write cycle time (word page). The device is specified for an ambient operating temperature range of −40°C to 85°C.
Key Features
- Memory Core 512 Mbit DRAM organized as 32M × 16, delivered in a parallel DDR SDRAM architecture.
- Performance Supports a clock frequency of 167 MHz with a specified access time of 700 ps and a 15 ns write cycle time (word page).
- Power Operates from a 2.3 V to 2.7 V supply range for low-voltage system integration.
- Package & Mounting 60-TFBGA package (60-FBGA, 10 × 12.5 mm) designed for surface-mount applications.
- Operating Range Specified ambient temperature range of −40°C to 85°C (TA).
- Interface & Format Parallel memory interface in DDR SDRAM format suitable for synchronous memory applications.
Unique Advantages
- 512 Mbit capacity in compact FBGA: Provides half-gigabit density in a 60-FBGA (10 × 12.5 mm) package for space-constrained boards.
- DDR SDRAM timing: 167 MHz clock and 700 ps access time support synchronous, high-speed parallel memory access.
- Low-voltage operation: 2.3 V to 2.7 V supply range helps reduce power consumption and simplifies power-rail design.
- Wide ambient temperature support: −40°C to 85°C rating enables deployment across a broad range of environmental conditions.
- Deterministic write timing: 15 ns write cycle time (word page) provides defined write performance for system timing planning.
Why Choose IC DRAM 512MBIT PAR 60FBGA?
The MT46V32M16FN-6 IT:C TR combines a 512 Mbit DDR SDRAM architecture with a compact 60-FBGA package and defined timing characteristics, making it suitable for designs that require parallel synchronous DRAM with clear electrical and thermal specifications. Its low-voltage operation and wide ambient temperature range support reliable integration into a variety of board-level implementations.
This device is appropriate for engineers and procurement teams seeking a documented memory component with specified clock, access, and write-cycle parameters, offering predictable behavior for system timing and power budgeting.
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