MT46V32M16FN-5B:F TR

The MT46V32M16FN-5B:F TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 60-ball TFBGA package (10 × 12.5 mm). It implements a double-data-rate, internal pipelined architecture with four internal banks for concurrent operation and source-synchronous data capture.

This device is intended for designs that require a compact, parallel DDR memory solution operating at up to 200 MHz (DDR400B timing grade -5B) with 2.5 V I/O and a commercial operating temperature range of 0 °C to 70 °C.

Key Features

• Core Architecture  Internal pipelined DDR architecture supporting two data transfers per clock cycle and four internal banks for concurrent operation.
• Memory Organization  512 Mbit capacity configured as 32M × 16 with x16 data width.
• Data and Clock Interfaces  Bidirectional data strobe (DQS) transmitted/received with data (x16 has two DQS lines — one per byte), and differential clock inputs (CK/CK#) for source-synchronous capture.
• Timing and Performance  Speed grade -5B supports up to 200 MHz clock rate (DDR, CL = 3 option shown in datasheet). Typical access window and DQS/DQ alignment parameters are provided in the datasheet; measured access time listed as 700 ps.
• Power and I/O  VDD/VDDQ rated at 2.5 V ±0.2 V (also 2.6 V ±0.1 V option for DDR400); 2.5 V I/O compatible with SSTL_2 signaling. Voltage supply range specified as 2.5 V to 2.7 V.
• Refresh and Reliability  Auto refresh and programmable refresh intervals (8K refresh cycles) and optional self-refresh functionality documented in the datasheet.
• Write and Masking  Data mask (DM) support for masking write data (x16 has two DM signals — one per byte); write cycle timing example: 15 ns write cycle time for word/page operations.
• Package and Mounting  60-ball TFBGA package, 10 mm × 12.5 mm footprint (60-FBGA), suitable for compact board-level integration. Mounting type: volatile memory device.
• Operating Range  Commercial temperature rating with specified operating temperature range of 0 °C to 70 °C.

Typical Applications

• Embedded memory subsystems  Use as parallel DDR SDRAM where a 512 Mbit x16 memory is required in a compact FBGA package.
• Board-level DRAM modules  Integration into memory modules or daughter cards that require DDR signaling and 2.5 V I/O compatibility.
• Legacy parallel DDR interfaces  Replacement or implementation in systems designed around parallel DDR SDRAM architectures with CL and timing grades provided in the datasheet.

Unique Advantages

• Compact FBGA footprint: 60-ball TFBGA (10 × 12.5 mm) enables high-density board layouts without increasing module area.
• Source-synchronous DQS support: Bidirectional DQS with per-byte strobes on x16 improves data capture alignment at DDR rates.
• DDR pipelined architecture: Internal double-data-rate pipeline and four banks allow two data accesses per clock cycle and concurrent bank activity.
• Configurable burst and refresh behavior: Programmable burst lengths (2, 4, 8) and standard auto-refresh with 8K refresh cycles provide flexible memory timing and power management options.
• Industry-standard voltage compatibility: VDD/VDDQ and I/O levels at 2.5 V with documented tolerances support SSTL_2-compatible interfaces.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V32M16FN-5B:F TR delivers a compact, parallel DDR SDRAM solution with explicit timing, power and package specifications suitable for designs needing 512 Mbit ×16 volatile memory. Its DDR architecture, DQS-based source-synchronous capture and 60-ball FBGA package make it a straightforward choice when board space and predictable timing are priorities.

This device suits engineers designing or maintaining systems that require documented DDR timing grades, a commercial operating temperature range (0 °C to 70 °C), and 2.5 V I/O operation. The included datasheet timing and interface details support accurate system integration and validation.

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