MT46V32M16FN-6 IT:F TR

The MT46V32M16FN-6 IT:F TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface in a 60-ball FBGA package. It implements an internal pipelined double-data-rate architecture with source-synchronous data capture for high-throughput memory access.

Designed for use in systems requiring medium-density DDR memory, this device offers a 2.3 V–2.7 V supply range and an industrial operating temperature range of −40°C to +85°C, delivering a balance of performance and board-level integration for commercial and industrial electronic designs.

Key Features

• Core & Architecture Internal pipelined DDR architecture with bidirectional data strobe (DQS), DLL alignment, and differential clock inputs (CK/CK#) enabling two data transfers per clock cycle.
• Memory Organization 512 Mbit capacity organized as 32M × 16 with four internal banks and support for data mask (two DMs for x16), providing byte-level write masking.
• Performance & Timing Clock rate up to 167 MHz (speed grade -6) with an access time of 700 ps and a write cycle (word page) of 15 ns; programmable burst lengths of 2, 4, or 8.
• Power Operates from a 2.3 V to 2.7 V supply (VDD/VDDQ), with 2.5 V I/O compatibility described in the device family datasheet.
• Refresh & Power Management Supports auto refresh and self-refresh functionality per the product family specification, with 8K refresh cycles across applicable temperature grades.
• Package & Temperature 60-ball TFBGA package (10 mm × 12.5 mm) with an operating temperature range of −40°C to +85°C (industrial TA rating).

Typical Applications

• Industrial and commercial electronic systems — Provides medium-density DDR SDRAM in designs that require an industrial temperature range.
• Embedded systems using parallel DDR interfaces — Serves as system memory where x16 parallel DDR organization and source-synchronous capture are required.
• Board-level memory integration — Compact 60-ball FBGA package suitable for high-density PCB layouts and board-level memory expansion.

Unique Advantages

• Industrial temperature capability: Rated for −40°C to +85°C, enabling use in temperature-demanding environments.
• Compact FBGA footprint: 60-ball (10 mm × 12.5 mm) package minimizes board area while providing a robust BGA mounting option.
• DDR performance features: Source-synchronous DQS, DLL alignment, and differential clock inputs enable reliable high-speed data transfers at the specified clock rate.
• Flexible timing: Programmable burst lengths (2, 4, 8) and multi-bank architecture support varied access patterns and throughput needs.
• Industry-standard supply range: 2.3 V–2.7 V operation aligns with common 2.5 V DDR system requirements.

Why Choose MT46V32M16FN-6 IT:F TR?

The MT46V32M16FN-6 IT:F TR positions as a practical 512 Mbit DDR SDRAM option for designs that require a parallel x16 memory interface, compact FBGA packaging, and industrial temperature operation. Its DDR architecture, programmable burst modes, and multi-bank organization provide the timing flexibility and throughput characteristics needed for medium-density memory subsystems.

As part of Micron Technology’s 512 Mb DDR SDRAM family, the device is specified in the manufacturer's product documentation for timing, voltage, refresh, and packaging details to support design-in and validation activities.

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