MT46V32M16FN-6:F TR

The MT46V32M16FN-6:F TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 60-ball thin FBGA package (10 mm × 12.5 mm). It implements double-data-rate (DDR) architecture with an internal, pipelined design to provide two data accesses per clock cycle.

Targeted for commercial-temperature applications, the device operates at an ambient range of 0°C to 70°C, runs at a clock rate up to 167 MHz for the -6 speed grade, and supports a 2.3 V to 2.7 V supply range.

Key Features

• Core Architecture  Internal pipelined DDR SDRAM architecture providing two data transfers per clock cycle and a DLL for aligning DQ and DQS transitions with CK.
• Memory Organization  512 Mbit capacity configured as 32M × 16 with four internal banks for concurrent operation.
• Performance & Timing  Rated clock frequency up to 167 MHz (speed grade -6), access window 700 ps, and a typical write cycle time (word/page) of 15 ns.
• Data Strobe & Mask  Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; x16 parts include two DQS signals (one per byte) and two data mask (DM) inputs.
• Programmable Burst & Refresh  Programmable burst lengths of 2, 4, or 8 and standard auto-refresh support (8K refresh cycles).
• Power & I/O  VDD / VDDQ nominally +2.5 V (supported range 2.3 V to 2.7 V); I/O compatible with SSTL_2 signaling as documented in the device specification.
• Package & Mounting  60-ball thin FBGA package (60-TFBGA, 10 mm × 12.5 mm) designed for board-level integration.
• Operating Conditions  Commercial temperature rating with an ambient operating range of 0°C to +70°C.

Unique Advantages

• DDR throughput with low-latency architecture: Internal pipelined DDR operation enables two data accesses per clock, increasing effective data transfer rates at the specified clock frequency.
• Source-synchronous capture for reliable timing: DQS signals transmitted/received with data and a DLL assist in aligning data transitions to the clock for improved read/write timing margin.
• Flexible burst and banking: Programmable burst lengths (2/4/8) and four internal banks allow designers to tune data transfer patterns and support concurrent operations.
• Standard supply and I/O compatibility: Operates with a 2.3 V–2.7 V supply and supports SSTL_2-style I/O levels as specified, enabling integration with standard DDR memory interfaces.
• Compact FBGA package: 60-ball FBGA (10 mm × 12.5 mm) provides a small footprint for dense PCB layouts.
• Commercial operating range: Specified for 0°C to +70°C ambient operation for commercial applications.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V32M16FN-6:F TR delivers a 512 Mbit DDR SDRAM option in a compact 60-ball FBGA package with x16 organization and four internal banks. Its DDR architecture, bidirectional DQS, and DLL-based timing alignment make it suitable for designs that require parallel DDR memory with predictable timing behavior at the -6 speed grade (167 MHz).

Backed by Micron Technology Inc. specifications, the device provides a clear set of electrical and timing parameters—2.3 V–2.7 V supply range, 0°C–70°C operating range, and programmable burst lengths—supporting straightforward integration into commercial embedded and system designs where a 512 Mbit parallel DDR memory is required.

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