MT46V32M16FN-75 L:C TR

The MT46V32M16FN-75 L:C TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. It is supplied in a 60-TFBGA (10 × 12.5 mm) package and is intended for systems requiring parallel DDR memory at a 133 MHz clock frequency.

Key electrical and timing parameters include a supply voltage range of 2.3 V to 2.7 V, an access time of 750 ps, and a write cycle time (word/page) of 15 ns. The device is specified for operation over a temperature range of 0°C to 70°C (TA).

Key Features

• Memory Core  512 Mbit DRAM organized as 32M × 16, providing parallel DDR memory capacity in a compact footprint.
• Technology  SDRAM – DDR architecture with a clock frequency of 133 MHz for synchronous parallel operation.
• Timing  Access time of 750 ps and a write cycle time (word/page) of 15 ns, enabling deterministic timing characteristics for system design.
• Power  Operates from a supply voltage range of 2.3 V to 2.7 V to match system DDR power rails.
• Package & Mounting  60-TFBGA (60-FBGA, 10 × 12.5 mm) package suitable for surface-mount assembly.
• Operating Range  Specified operating ambient temperature range of 0°C to 70°C (TA).

Typical Applications

• Parallel memory subsystems  Use as 512 Mbit parallel DDR SDRAM in systems that require organized 32M × 16 memory arrays.
• Embedded systems  Provides parallel DDR memory capacity in a compact 60-FBGA package for space-constrained embedded designs.
• Consumer and industrial electronics  Fits designs that require a 2.3 V–2.7 V DDR memory device with defined timing and access characteristics.

Unique Advantages

• Defined DDR timing:  133 MHz clock frequency and 750 ps access time give clear, verifiable timing characteristics for system integration.
• Compact BGA package:  60-TFBGA (10 × 12.5 mm) package minimizes board area while supporting surface-mount assembly.
• Standard DDR organization:  32M × 16 memory organization simplifies addressing and integration into parallel memory architectures.
• Wide supply tolerance:  Operates across a 2.3 V–2.7 V supply range to align with common DDR power domains.
• Specified operating temperature:  Rated for 0°C to 70°C (TA), enabling use in a range of ambient conditions.
• Manufacturer:  Produced by Micron Technology Inc., providing traceable sourcing and manufacturer identification.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The IC DRAM 512MBIT PARALLEL 60FBGA (MT46V32M16FN-75 L:C TR) is positioned for designs that require a 512 Mbit DDR SDRAM device with defined timing (133 MHz clock, 750 ps access) and a compact 60-FBGA package. Its 32M × 16 organization and parallel interface make it suitable for systems where that memory configuration and physical footprint are required.

Manufactured by Micron Technology Inc., this device is specified with clear electrical and environmental parameters (2.3 V–2.7 V supply, 0°C to 70°C operating temperature), supporting predictable integration and procurement for production designs.

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