MT46V32M16P-5B AIT:J

IC DRAM 512MBIT PARALLEL 66TSOP
Part Description

IC DRAM 512MBIT PARALLEL 66TSOP

Quantity 211 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeAutomotive
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.0036

Overview of MT46V32M16P-5B AIT:J – IC DRAM 512MBIT PARALLEL 66TSOP

The MT46V32M16P-5B AIT:J is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements a double-data-rate architecture with source‑synchronous data strobes for high-throughput memory access in embedded and automotive-capable designs.

Targeted use cases include systems requiring compact, high-speed volatile memory with automotive-grade qualification and a narrow TSOP footprint where board-level reliability and deterministic timing are important.

Key Features

  • Core / Architecture  Internal pipelined DDR architecture enables two data accesses per clock cycle and supports four internal banks for concurrent operation.
  • Memory Organization  512 Mbit capacity organized as 32M × 16 bits, with parallel interface and two data bytes (x16) for byte-oriented operations.
  • Performance  Speed grade -5B supports a clock frequency up to 200 MHz with an access time of 700 ps and a write cycle time (word page) of 15 ns.
  • Data timing and capture  Bidirectional data strobe (DQS) is transmitted/received with data (x16 has two DQS signals, one per byte); DLL aligns DQ/DQS with CK for source-synchronous capture. Differential clock inputs (CK/CK#) and programmable burst lengths (2, 4, 8) are supported.
  • Power and I/O  Operating supply range is 2.5 V–2.7 V with 2.5 V I/O (SSTL_2 compatible) and VDD/VDDQ operating points indicated in the datasheet.
  • System reliability and refresh  Auto refresh supported with 8K refresh cycles; device includes data mask (DM) functionality (x16 has two DM signals) and concurrent auto-precharge options.
  • Automotive Qualification  AEC‑Q100 qualification and an automotive grade designation are provided for designs requiring automotive-capable components.
  • Package  66‑TSSOP (0.400", 10.16 mm width) longer‑lead TSOP option for improved board-level reliability and mechanical robustness.
  • Operating Range  Specified operating ambient temperature: −40 °C to +85 °C (TA).

Typical Applications

  • Automotive electronic modules  Use as volatile working memory in automotive control units where AEC‑Q100 qualification and a compact TSOP footprint are required.
  • Embedded systems  High-throughput DDR memory for microcontroller- or SoC‑based platforms needing parallel DDR storage and deterministic timing.
  • Industrial control  Local DRAM for data buffering and real‑time processing in industrial electronics operating across wide temperature ranges.

Unique Advantages

  • DDR performance with predictable timing: Double‑data‑rate architecture and DLL alignment provide consistent source‑synchronous data capture and support up to 200 MHz clocking for burst transfers.
  • Automotive-capable qualification: AEC‑Q100 qualification and automotive grade designation support use in designs that require industry-recognized component screening.
  • Compact, reliable package: 66‑TSSOP longer‑lead package offers a narrow board footprint with improved lead length for mechanical reliability.
  • Byte-level control: Two DQS and two DM signals on x16 configuration enable byte-oriented masking and timing control for flexible system integration.
  • Flexible refresh and power: Auto refresh with 8K cycle support and a 2.5 V I/O supply simplify interfacing with SSTL_2-compatible memory controllers.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16P-5B AIT:J combines DDR SDRAM performance, a compact 66‑TSSOP package, and automotive AEC‑Q100 qualification to meet the needs of embedded and automotive-capable systems that require reliable, high-speed volatile memory. Its 32M × 16 organization, dual-byte DQS/DM signals and source‑synchronous DDR architecture deliver predictable timing and flexible data handling for buffering and working memory tasks.

This device is suited for designers who need a narrow-package DDR solution with automotive qualification and clear electrical/timing specifications. The combination of 2.5 V I/O compatibility, programmable burst lengths, and on‑chip DLL alignment supports straightforward integration with parallel memory controllers in space-constrained boards.

Request a quote or submit a pricing inquiry to receive component availability, lead-time details, and volume pricing for the MT46V32M16P-5B AIT:J.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay
    Featured Products
    Latest News
    keyboard_arrow_up