MT46V32M16P-5B AIT:J
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 211 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Automotive | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT46V32M16P-5B AIT:J – IC DRAM 512MBIT PARALLEL 66TSOP
The MT46V32M16P-5B AIT:J is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements a double-data-rate architecture with source‑synchronous data strobes for high-throughput memory access in embedded and automotive-capable designs.
Targeted use cases include systems requiring compact, high-speed volatile memory with automotive-grade qualification and a narrow TSOP footprint where board-level reliability and deterministic timing are important.
Key Features
- Core / Architecture Internal pipelined DDR architecture enables two data accesses per clock cycle and supports four internal banks for concurrent operation.
- Memory Organization 512 Mbit capacity organized as 32M × 16 bits, with parallel interface and two data bytes (x16) for byte-oriented operations.
- Performance Speed grade -5B supports a clock frequency up to 200 MHz with an access time of 700 ps and a write cycle time (word page) of 15 ns.
- Data timing and capture Bidirectional data strobe (DQS) is transmitted/received with data (x16 has two DQS signals, one per byte); DLL aligns DQ/DQS with CK for source-synchronous capture. Differential clock inputs (CK/CK#) and programmable burst lengths (2, 4, 8) are supported.
- Power and I/O Operating supply range is 2.5 V–2.7 V with 2.5 V I/O (SSTL_2 compatible) and VDD/VDDQ operating points indicated in the datasheet.
- System reliability and refresh Auto refresh supported with 8K refresh cycles; device includes data mask (DM) functionality (x16 has two DM signals) and concurrent auto-precharge options.
- Automotive Qualification AEC‑Q100 qualification and an automotive grade designation are provided for designs requiring automotive-capable components.
- Package 66‑TSSOP (0.400", 10.16 mm width) longer‑lead TSOP option for improved board-level reliability and mechanical robustness.
- Operating Range Specified operating ambient temperature: −40 °C to +85 °C (TA).
Typical Applications
- Automotive electronic modules Use as volatile working memory in automotive control units where AEC‑Q100 qualification and a compact TSOP footprint are required.
- Embedded systems High-throughput DDR memory for microcontroller- or SoC‑based platforms needing parallel DDR storage and deterministic timing.
- Industrial control Local DRAM for data buffering and real‑time processing in industrial electronics operating across wide temperature ranges.
Unique Advantages
- DDR performance with predictable timing: Double‑data‑rate architecture and DLL alignment provide consistent source‑synchronous data capture and support up to 200 MHz clocking for burst transfers.
- Automotive-capable qualification: AEC‑Q100 qualification and automotive grade designation support use in designs that require industry-recognized component screening.
- Compact, reliable package: 66‑TSSOP longer‑lead package offers a narrow board footprint with improved lead length for mechanical reliability.
- Byte-level control: Two DQS and two DM signals on x16 configuration enable byte-oriented masking and timing control for flexible system integration.
- Flexible refresh and power: Auto refresh with 8K cycle support and a 2.5 V I/O supply simplify interfacing with SSTL_2-compatible memory controllers.
Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?
The MT46V32M16P-5B AIT:J combines DDR SDRAM performance, a compact 66‑TSSOP package, and automotive AEC‑Q100 qualification to meet the needs of embedded and automotive-capable systems that require reliable, high-speed volatile memory. Its 32M × 16 organization, dual-byte DQS/DM signals and source‑synchronous DDR architecture deliver predictable timing and flexible data handling for buffering and working memory tasks.
This device is suited for designers who need a narrow-package DDR solution with automotive qualification and clear electrical/timing specifications. The combination of 2.5 V I/O compatibility, programmable burst lengths, and on‑chip DLL alignment supports straightforward integration with parallel memory controllers in space-constrained boards.
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