MT46V32M16P-5B L:J TR
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 320 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT46V32M16P-5B L:J TR – IC DRAM 512Mbit Parallel 66-TSSOP
The MT46V32M16P-5B L:J TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel interface in a 66‑pin TSSOP (0.400", 10.16 mm width) package. It implements an internal, pipelined double-data-rate architecture that performs two data accesses per clock cycle, making it suitable for commercial electronic designs that require compact board-level DDR memory.
Key attributes include operation from 2.5 V to 2.7 V, a commercial temperature rating of 0 °C to 70 °C, and a speed grade (-5B) supporting clock operation up to 200 MHz (CL = 3).
Key Features
- Core & memory architecture Internal pipelined DDR architecture with double-data-rate operation and four internal banks for concurrent operation; organized as 32M × 16 (512 Mbit).
- Performance & timing Speed grade -5B supports clock rates up to 200 MHz (CL = 3); specified access time 700 ps and write cycle time (word page) of 15 ns.
- Data capture & timing alignment Bidirectional data strobe (DQS) transmitted/received with data (x16 devices provide two DQS, one per byte); on-chip DLL aligns DQ and DQS transitions with CK for source‑synchronous capture.
- Interface & signaling Differential clock inputs (CK/CK#) with commands entered on each positive CK edge; 2.5 V I/O compatible with SSTL_2 signaling.
- Data control & burst Data mask (DM) support (x16 has two masks, one per byte) and programmable burst lengths of 2, 4, or 8 for flexible data transfer patterns.
- Refresh & power modes Supports auto refresh and standard self refresh; 8192 refresh cycles per 64 ms for commercial temperature rating.
- Power supply VDD and VDDQ recommended range +2.5 V ±0.2 V (device specified across 2.5 V–2.7 V operation).
- Package & thermal 66‑pin TSSOP package (0.400" / 10.16 mm width) specified for commercial operation from 0 °C to 70 °C.
Typical Applications
- Board-level DDR memory for commercial electronics — Compact 66‑TSSOP footprint provides 512 Mbit DDR capacity for space-constrained commercial systems operating at 0 °C to 70 °C.
- Embedded systems with parallel DDR interfaces — 32M × 16 organization and parallel DDR signaling accommodate designs that require x16 data widths and source-synchronous capture.
- OEM memory modules and upgrades — Standard DDR features (DLL, DQS, data mask, programmable burst lengths) enable integration into legacy and custom memory subsystems.
Unique Advantages
- Double-data-rate throughput: Two data accesses per clock cycle deliver higher effective bandwidth compared with single-data-rate devices at the same clock.
- High-frequency capability: Speed grade -5B supports operation up to 200 MHz (CL = 3), enabling higher data rates in compatible systems.
- Byte-level data strobe and masking: Two DQS and two DM signals on x16 devices allow per-byte data capture and write masking for flexible data handling.
- SSTL_2-compatible I/O: 2.5 V I/O signaling aligns with SSTL_2 voltage ranges, simplifying interface design for standard DDR signaling environments.
- Compact surface-mount package: 66‑pin TSSOP (0.400") provides a small board footprint while maintaining a full-featured DDR interface.
- Commercial temperature qualification: Rated for 0 °C to 70 °C to match typical commercial electronic product requirements.
Why Choose MT46V32M16P-5B L:J TR?
The MT46V32M16P-5B L:J TR combines a standard DDR SDRAM architecture with commercial-grade operating conditions and a compact 66‑TSSOP package. Its 32M × 16 organization, DLL-aligned DQS, and programmable burst lengths provide predictable timing and flexible transfer modes for board-level memory designs.
This device suits designers seeking a 512 Mbit parallel DDR memory option with up to 200 MHz clock capability, 2.5 V I/O, and a small-footprint TSOP package for space-constrained commercial applications. The documented timing parameters and refresh behavior support reliable integration into systems requiring standard DDR control and refresh management.
Request a quote or submit an RFQ for the MT46V32M16P-5B L:J TR to receive pricing and availability information tailored to your production needs.