MT46V32M16P-5B L:J TR

IC DRAM 512MBIT PARALLEL 66TSOP
Part Description

IC DRAM 512MBIT PARALLEL 66TSOP

Quantity 320 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0036

Overview of MT46V32M16P-5B L:J TR – IC DRAM 512Mbit Parallel 66-TSSOP

The MT46V32M16P-5B L:J TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel interface in a 66‑pin TSSOP (0.400", 10.16 mm width) package. It implements an internal, pipelined double-data-rate architecture that performs two data accesses per clock cycle, making it suitable for commercial electronic designs that require compact board-level DDR memory.

Key attributes include operation from 2.5 V to 2.7 V, a commercial temperature rating of 0 °C to 70 °C, and a speed grade (-5B) supporting clock operation up to 200 MHz (CL = 3).

Key Features

  • Core & memory architecture Internal pipelined DDR architecture with double-data-rate operation and four internal banks for concurrent operation; organized as 32M × 16 (512 Mbit).
  • Performance & timing Speed grade -5B supports clock rates up to 200 MHz (CL = 3); specified access time 700 ps and write cycle time (word page) of 15 ns.
  • Data capture & timing alignment Bidirectional data strobe (DQS) transmitted/received with data (x16 devices provide two DQS, one per byte); on-chip DLL aligns DQ and DQS transitions with CK for source‑synchronous capture.
  • Interface & signaling Differential clock inputs (CK/CK#) with commands entered on each positive CK edge; 2.5 V I/O compatible with SSTL_2 signaling.
  • Data control & burst Data mask (DM) support (x16 has two masks, one per byte) and programmable burst lengths of 2, 4, or 8 for flexible data transfer patterns.
  • Refresh & power modes Supports auto refresh and standard self refresh; 8192 refresh cycles per 64 ms for commercial temperature rating.
  • Power supply VDD and VDDQ recommended range +2.5 V ±0.2 V (device specified across 2.5 V–2.7 V operation).
  • Package & thermal 66‑pin TSSOP package (0.400" / 10.16 mm width) specified for commercial operation from 0 °C to 70 °C.

Typical Applications

  • Board-level DDR memory for commercial electronics — Compact 66‑TSSOP footprint provides 512 Mbit DDR capacity for space-constrained commercial systems operating at 0 °C to 70 °C.
  • Embedded systems with parallel DDR interfaces — 32M × 16 organization and parallel DDR signaling accommodate designs that require x16 data widths and source-synchronous capture.
  • OEM memory modules and upgrades — Standard DDR features (DLL, DQS, data mask, programmable burst lengths) enable integration into legacy and custom memory subsystems.

Unique Advantages

  • Double-data-rate throughput: Two data accesses per clock cycle deliver higher effective bandwidth compared with single-data-rate devices at the same clock.
  • High-frequency capability: Speed grade -5B supports operation up to 200 MHz (CL = 3), enabling higher data rates in compatible systems.
  • Byte-level data strobe and masking: Two DQS and two DM signals on x16 devices allow per-byte data capture and write masking for flexible data handling.
  • SSTL_2-compatible I/O: 2.5 V I/O signaling aligns with SSTL_2 voltage ranges, simplifying interface design for standard DDR signaling environments.
  • Compact surface-mount package: 66‑pin TSSOP (0.400") provides a small board footprint while maintaining a full-featured DDR interface.
  • Commercial temperature qualification: Rated for 0 °C to 70 °C to match typical commercial electronic product requirements.

Why Choose MT46V32M16P-5B L:J TR?

The MT46V32M16P-5B L:J TR combines a standard DDR SDRAM architecture with commercial-grade operating conditions and a compact 66‑TSSOP package. Its 32M × 16 organization, DLL-aligned DQS, and programmable burst lengths provide predictable timing and flexible transfer modes for board-level memory designs.

This device suits designers seeking a 512 Mbit parallel DDR memory option with up to 200 MHz clock capability, 2.5 V I/O, and a small-footprint TSOP package for space-constrained commercial applications. The documented timing parameters and refresh behavior support reliable integration into systems requiring standard DDR control and refresh management.

Request a quote or submit an RFQ for the MT46V32M16P-5B L:J TR to receive pricing and availability information tailored to your production needs.

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