MT46V32M16P-5B:C TR
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 656 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16P-5B:C TR – IC DRAM 512Mbit Parallel 66TSSOP
The MT46V32M16P-5B:C TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. Manufactured by Micron Technology Inc., it provides volatile DRAM storage in a 66-TSSOP package for board-level memory implementations.
This device is suitable for designs that require a 512 Mbit parallel DDR memory solution operating at a 200 MHz clock rate and within a 0°C to 70°C ambient range.
Key Features
- Memory Core DDR SDRAM volatile memory organized as 32M × 16 to provide a total capacity of 512 Mbit.
- Interface Parallel memory interface suitable for parallel DDR memory architectures.
- Performance 200 MHz clock frequency with an access time of 700 ps and a write cycle time (word page) of 15 ns.
- Power Nominal supply voltage range of 2.5 V to 2.7 V.
- Package 66-TSSOP (0.400", 10.16 mm width) supplier device package for compact board-level integration.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
Typical Applications
- Parallel memory subsystems — Use as on-board DDR memory where a 16-bit parallel DRAM device is required.
- Embedded systems — Provides 512 Mbit volatile storage for embedded designs requiring a parallel DDR interface and 200 MHz clocking.
- Board-level memory expansion — Suitable for designs needing compact 66-TSSOP packaging and a 2.5 V–2.7 V supply window.
Unique Advantages
- 512 Mbit density in a 16-bit organization: Delivers a 32M × 16 memory layout that fits designs requiring this capacity and data width.
- DDR SDRAM performance: 200 MHz clock and 700 ps access time provide timing characteristics suitable for parallel DDR memory architectures.
- Standard supply voltage range: Operates from 2.5 V to 2.7 V, aligning with common DDR memory power domains.
- Compact 66-TSSOP package: Small package footprint (0.400", 10.16 mm width) simplifies board placement and routing for dense PCB designs.
- Qualified operating temperature range: Specified for 0°C to 70°C ambient operation to meet typical commercial temperature requirements.
Why Choose MT46V32M16P-5B:C TR?
The MT46V32M16P-5B:C TR positions itself as a straightforward 512 Mbit DDR SDRAM option for designs that require a parallel 16-bit DRAM device in a compact 66-TSSOP package. Its defined clock, timing, and voltage parameters make it a predictable component for board-level memory subsystems where these exact specifications are required.
This device is suited for engineers and procurement teams looking for a Micron-manufactured DDR SDRAM chip with clear operating temperature, supply voltage, and package dimensions, supporting consistent integration into designs that match these parameters.
Request a quote or submit an inquiry to obtain pricing and availability information for the MT46V32M16P-5B:C TR.