MT46V32M16P-5B:C TR

IC DRAM 512MBIT PARALLEL 66TSOP
Part Description

IC DRAM 512MBIT PARALLEL 66TSOP

Quantity 656 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level4 (72 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16P-5B:C TR – IC DRAM 512Mbit Parallel 66TSSOP

The MT46V32M16P-5B:C TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. Manufactured by Micron Technology Inc., it provides volatile DRAM storage in a 66-TSSOP package for board-level memory implementations.

This device is suitable for designs that require a 512 Mbit parallel DDR memory solution operating at a 200 MHz clock rate and within a 0°C to 70°C ambient range.

Key Features

  • Memory Core DDR SDRAM volatile memory organized as 32M × 16 to provide a total capacity of 512 Mbit.
  • Interface Parallel memory interface suitable for parallel DDR memory architectures.
  • Performance 200 MHz clock frequency with an access time of 700 ps and a write cycle time (word page) of 15 ns.
  • Power Nominal supply voltage range of 2.5 V to 2.7 V.
  • Package 66-TSSOP (0.400", 10.16 mm width) supplier device package for compact board-level integration.
  • Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).

Typical Applications

  • Parallel memory subsystems — Use as on-board DDR memory where a 16-bit parallel DRAM device is required.
  • Embedded systems — Provides 512 Mbit volatile storage for embedded designs requiring a parallel DDR interface and 200 MHz clocking.
  • Board-level memory expansion — Suitable for designs needing compact 66-TSSOP packaging and a 2.5 V–2.7 V supply window.

Unique Advantages

  • 512 Mbit density in a 16-bit organization: Delivers a 32M × 16 memory layout that fits designs requiring this capacity and data width.
  • DDR SDRAM performance: 200 MHz clock and 700 ps access time provide timing characteristics suitable for parallel DDR memory architectures.
  • Standard supply voltage range: Operates from 2.5 V to 2.7 V, aligning with common DDR memory power domains.
  • Compact 66-TSSOP package: Small package footprint (0.400", 10.16 mm width) simplifies board placement and routing for dense PCB designs.
  • Qualified operating temperature range: Specified for 0°C to 70°C ambient operation to meet typical commercial temperature requirements.

Why Choose MT46V32M16P-5B:C TR?

The MT46V32M16P-5B:C TR positions itself as a straightforward 512 Mbit DDR SDRAM option for designs that require a parallel 16-bit DRAM device in a compact 66-TSSOP package. Its defined clock, timing, and voltage parameters make it a predictable component for board-level memory subsystems where these exact specifications are required.

This device is suited for engineers and procurement teams looking for a Micron-manufactured DDR SDRAM chip with clear operating temperature, supply voltage, and package dimensions, supporting consistent integration into designs that match these parameters.

Request a quote or submit an inquiry to obtain pricing and availability information for the MT46V32M16P-5B:C TR.

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