MT46V32M16P-6T IT:F

IC DRAM 512MBIT PAR 66TSOP
Part Description

IC DRAM 512MBIT PAR 66TSOP

Quantity 537 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeIndustrial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16P-6T IT:F – IC DRAM 512MBIT PAR 66TSOP

The MT46V32M16P-6T IT:F is a 512 Mbit volatile DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements a pipelined double-data-rate architecture with source‑synchronous data strobe and internal DLL to support two data transfers per clock cycle.

This device is specified for operation from -40°C to +85°C and a supply range of 2.3 V to 2.7 V, making it suitable for designs that require 512 Mbit DDR SDRAM in a compact TSOP footprint and industrial temperature operation.

Key Features

  • Core Architecture Internal, pipelined DDR architecture providing two data accesses per clock cycle and four internal banks for concurrent operation.
  • Memory Organization & Density 512 Mbit capacity arranged as 32M × 16 (8M × 16 × 4 banks) for x16 data-wide implementations.
  • Performance & Timing 167 MHz clock rate (speed grade -6T), typical access time 700 ps and write cycle time (word/page) of 15 ns; programmable burst lengths of 2, 4, or 8.
  • Data Interface Parallel DDR interface with bidirectional data strobe (DQS) transmitted/received with data; x16 devices include two DQS/DM signals (one per byte).
  • Clock & Signal Integrity Differential clock inputs (CK/CK#) and an internal DLL to align DQ/DQS transitions with CK for source‑synchronous capture.
  • Power Specified supply voltage range 2.3 V to 2.7 V (VDD/VDDQ), supporting SSTL_2 style I/O levels as documented.
  • Refresh & Power Management Supports auto refresh and self refresh options; 8192 refresh cycles per 64 ms for commercial/industrial timing per datasheet tables.
  • Package & Mounting 66‑TSSOP (0.400", 10.16 mm width) plastic package ideal for surface‑mount board assembly in space‑constrained designs.
  • Industrial Temperature Range Rated for -40°C to +85°C (TA), suitable for applications requiring extended ambient temperature capability.

Typical Applications

  • Embedded Systems Use where a 512 Mbit DDR SDRAM with a parallel interface and industrial temperature range is required for system memory or buffering.
  • Networking & Communication Modules Suitable for modules needing parallel DDR memory with source‑synchronous DQS and differential clock inputs for timing-critical data transfers.
  • Industrial Control Equipment Fits industrial designs that require operation from -40°C to +85°C and a compact 66‑TSSOP footprint for board-level integration.

Unique Advantages

  • DDR Pipelined Architecture: Enables two data accesses per clock cycle through internal pipelining and four internal banks, improving throughput for parallel DDR designs.
  • Byte-level Data Strobe and Masking: x16 device includes two DQS and two DM signals (one per byte) for source‑synchronous reads/writes and byte-wise write masking.
  • Industrial Temperature Rating: Specified -40°C to +85°C operation for deployment in temperature-challenging environments.
  • Compact TSOP Packaging: 66‑TSSOP (10.16 mm width) provides a space-efficient surface-mount option for PCB designs.
  • Flexible Timing Options: Programmable burst lengths (2/4/8) and supported speed grades (including 167 MHz operation for the -6T grade) allow tuning for target system timing.
  • Standardized Supply Range: 2.3 V to 2.7 V supply compatibility aligns with common 2.5 V DDR I/O domains.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V32M16P-6T IT:F offers a 512 Mbit DDR SDRAM solution with a parallel x16 interface, industrial temperature rating, and a compact 66‑TSSOP package—combining DDR performance features such as DQS, DLL alignment, and programmable burst lengths with a board-friendly package. It is well suited to designs that need a verified DDR memory building block with explicit timing and electrical specifications.

This device is appropriate for engineers and procurement teams targeting systems that require a 512 Mbit DDR memory element with documented timing (167 MHz speed grade), 2.3 V–2.7 V operation, and -40°C to +85°C temperature capability.

Request a quote or submit an inquiry to receive pricing and availability information for the MT46V32M16P-6T IT:F and to start the parts qualification or procurement process.

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