MT46V32M16P-6T IT:F
| Part Description |
IC DRAM 512MBIT PAR 66TSOP |
|---|---|
| Quantity | 537 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16P-6T IT:F – IC DRAM 512MBIT PAR 66TSOP
The MT46V32M16P-6T IT:F is a 512 Mbit volatile DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements a pipelined double-data-rate architecture with source‑synchronous data strobe and internal DLL to support two data transfers per clock cycle.
This device is specified for operation from -40°C to +85°C and a supply range of 2.3 V to 2.7 V, making it suitable for designs that require 512 Mbit DDR SDRAM in a compact TSOP footprint and industrial temperature operation.
Key Features
- Core Architecture Internal, pipelined DDR architecture providing two data accesses per clock cycle and four internal banks for concurrent operation.
- Memory Organization & Density 512 Mbit capacity arranged as 32M × 16 (8M × 16 × 4 banks) for x16 data-wide implementations.
- Performance & Timing 167 MHz clock rate (speed grade -6T), typical access time 700 ps and write cycle time (word/page) of 15 ns; programmable burst lengths of 2, 4, or 8.
- Data Interface Parallel DDR interface with bidirectional data strobe (DQS) transmitted/received with data; x16 devices include two DQS/DM signals (one per byte).
- Clock & Signal Integrity Differential clock inputs (CK/CK#) and an internal DLL to align DQ/DQS transitions with CK for source‑synchronous capture.
- Power Specified supply voltage range 2.3 V to 2.7 V (VDD/VDDQ), supporting SSTL_2 style I/O levels as documented.
- Refresh & Power Management Supports auto refresh and self refresh options; 8192 refresh cycles per 64 ms for commercial/industrial timing per datasheet tables.
- Package & Mounting 66‑TSSOP (0.400", 10.16 mm width) plastic package ideal for surface‑mount board assembly in space‑constrained designs.
- Industrial Temperature Range Rated for -40°C to +85°C (TA), suitable for applications requiring extended ambient temperature capability.
Typical Applications
- Embedded Systems Use where a 512 Mbit DDR SDRAM with a parallel interface and industrial temperature range is required for system memory or buffering.
- Networking & Communication Modules Suitable for modules needing parallel DDR memory with source‑synchronous DQS and differential clock inputs for timing-critical data transfers.
- Industrial Control Equipment Fits industrial designs that require operation from -40°C to +85°C and a compact 66‑TSSOP footprint for board-level integration.
Unique Advantages
- DDR Pipelined Architecture: Enables two data accesses per clock cycle through internal pipelining and four internal banks, improving throughput for parallel DDR designs.
- Byte-level Data Strobe and Masking: x16 device includes two DQS and two DM signals (one per byte) for source‑synchronous reads/writes and byte-wise write masking.
- Industrial Temperature Rating: Specified -40°C to +85°C operation for deployment in temperature-challenging environments.
- Compact TSOP Packaging: 66‑TSSOP (10.16 mm width) provides a space-efficient surface-mount option for PCB designs.
- Flexible Timing Options: Programmable burst lengths (2/4/8) and supported speed grades (including 167 MHz operation for the -6T grade) allow tuning for target system timing.
- Standardized Supply Range: 2.3 V to 2.7 V supply compatibility aligns with common 2.5 V DDR I/O domains.
Why Choose IC DRAM 512MBIT PAR 66TSOP?
The MT46V32M16P-6T IT:F offers a 512 Mbit DDR SDRAM solution with a parallel x16 interface, industrial temperature rating, and a compact 66‑TSSOP package—combining DDR performance features such as DQS, DLL alignment, and programmable burst lengths with a board-friendly package. It is well suited to designs that need a verified DDR memory building block with explicit timing and electrical specifications.
This device is appropriate for engineers and procurement teams targeting systems that require a 512 Mbit DDR memory element with documented timing (167 MHz speed grade), 2.3 V–2.7 V operation, and -40°C to +85°C temperature capability.
Request a quote or submit an inquiry to receive pricing and availability information for the MT46V32M16P-6T IT:F and to start the parts qualification or procurement process.