MT46V32M16P-6T L:F TR

The MT46V32M16P-6T L:F TR is a 512 Mbit DDR SDRAM memory device from Micron Technology Inc., organized as 32M × 16 with a parallel memory interface. It implements a double-data-rate architecture with internal DLL and source-synchronous data strobe to support two data transfers per clock cycle.

This device targets systems requiring commodity DDR memory capacity and performance within a commercial temperature range, offering 167 MHz clock operation, parallel interface compatibility, and a 66-pin TSOP package for board-level integration.

Key Features

• Core Architecture  Double Data Rate (DDR) SDRAM with internal, pipelined DDR architecture enabling two data accesses per clock cycle.
• Memory Organization & Capacity  512 Mbit capacity configured as 32M × 16 with four internal banks for concurrent operation.
• Data I/O and Timing  Bidirectional data strobe (DQS) transmitted/received with data; DQS is edge-aligned for READs and center-aligned for WRITEs. Programmable burst lengths of 2, 4, or 8 are supported.
• Performance  Rated for up to 167 MHz clock frequency (speed grade -6T) with an access time of 700 ps and a write cycle time (word page) of 15 ns.
• Voltage and I/O  Supply voltage range of 2.3 V to 2.7 V; datasheet specifies VDD/VDDQ nominal 2.5 V (± tolerance options listed) and SSTL_2-compatible 2.5 V I/O.
• Refresh and Reliability Functions  Supports auto refresh (8K refresh cycles) and optional self-refresh modes as described in the device options.
• Package  66-pin TSSOP (0.400", 10.16 mm width) plastic TSOP package for surface-mount board designs.
• Operating Temperature  Commercial temperature rating: 0°C to +70°C (TA).

Unique Advantages

• Double-data-rate throughput: Two data transfers per clock cycle provide increased effective bandwidth compared with single-rate DRAM at the same clock frequency.
• Byte-oriented data strobes and masks: DQS and data mask (DM) signals (two per x16 device—one per byte) facilitate source-synchronous capture and selective byte writes.
• Flexible timing and burst control: Programmable burst lengths (2, 4, 8) and internal DLL help align data timing and support a range of system timing requirements.
• Compact TSOP footprint: 66-TSSOP package (10.16 mm width) enables integration into space-constrained board designs while providing standard surface-mount mounting.
• Commercial temperature grading: Rated for 0°C to +70°C operation, suitable for standard commercial applications requiring defined operating-temperature bounds.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V32M16P-6T L:F TR offers a practical DDR SDRAM option for designs requiring 512 Mbit of parallel DDR memory in an industry-standard TSOP package. With a 32M × 16 organization, 167 MHz clock capability, and source-synchronous DQS support, it provides deterministic timing features and configurable burst behavior that align with many embedded and system-level memory architectures.

This device is suitable for teams and projects that need a proven Micron DDR memory building block with specified voltage and temperature ranges, compact package options, and standard DDR feature support such as auto refresh, DLL alignment, and multi-bank operation.

Request a quote or submit a request for pricing and availability for the MT46V32M16P-6T L:F TR to receive lead-time and quantity details.