MT46V32M16P-6T IT:F TR
| Part Description |
IC DRAM 512MBIT PAR 66TSOP |
|---|---|
| Quantity | 589 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT46V32M16P-6T IT:F TR – IC DRAM 512MBIT PAR 66TSOP
The MT46V32M16P-6T IT:F TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface in a 66‑pin TSSOP package. It implements a double-data-rate architecture with internal DLL and source‑synchronous DQS for high‑throughput memory transfers.
Designed for systems that require 512 Mbit of volatile DDR memory in a space-efficient 66‑TSSOP footprint, the device offers programmable burst lengths, differential clock inputs, and industrial operating temperature support for robust operation across -40°C to +85°C.
Key Features
- Memory Architecture 512 Mbit DDR SDRAM organized as 32M × 16 with four internal banks and support for programmable burst lengths of 2, 4, or 8.
- Performance Double‑data‑rate operation with two data transfers per clock cycle; rated clock frequency up to 167 MHz (CL = 2.5 timing grade -6T) and an access time specification of 700 ps.
- Interface Parallel memory interface with bidirectional data strobe (DQS) transmitted/received with data; x16 devices include two DQS lines (one per byte) and two data mask (DM) signals.
- Clock and Timing Differential clock inputs (CK, CK#), commands sampled on CK positive edge, DQS alignment with data for READs and WRITEs, and an internal DLL to align DQ/DQS with CK.
- Refresh and Self‑Maintenance Supports auto refresh (8192 cycles for standard commercial/industrial refresh intervals) and selectable self refresh options (self refresh not available on AT devices as specified).
- Power 2.3 V to 2.7 V supply range (VDD and VDDQ operating nominally at 2.5 V ± tolerance options indicated in datasheet).
- Package 66‑TSSOP (0.400", 10.16 mm width) plastic package option; longer‑lead TSOP available for improved reliability as noted in product documentation.
- Temperature Range Industrial temperature rating: −40°C to +85°C (TA).
- Write and Cycle Timing Word/page write cycle time specified at 15 ns; timing grades include the -6T speed grade targeting DDR333 operation.
Typical Applications
- Parallel DDR Memory Subsystem Use as a 512 Mbit parallel DDR SDRAM device where a 32M × 16 organization and x16 data path are required for system memory implementations.
- Industrial Embedded Systems Industrial temperature rating (−40°C to +85°C) makes the device suitable for embedded designs demanding temperature‑tolerant volatile DDR storage.
- Board‑level Upgrades and Replacements Available in a 66‑TSSOP footprint for designs targeting through‑hole-compatible TSOP placement or retrofit scenarios requiring this package geometry.
Unique Advantages
- DDR Source‑Synchronous Interface: DQS transmitted/received with data and an internal DLL enable source‑synchronous capture for reliable high‑speed transfers.
- Byte‑wise Control for x16: Two DQS and two DM signals on the x16 device provide per‑byte data strobe and write masking for finer control of write operations.
- Flexible Timing Options: Available speed grades (including -6T) and programmable burst lengths (2, 4, 8) allow tuning of throughput and latency to match system timing requirements.
- Industrial Temperature Support: Rated for −40°C to +85°C operation, enabling use in temperature‑sensitive embedded and industrial environments.
- Compact TSOP Packaging: 66‑pin TSSOP package (10.16 mm width) supports compact board layouts while retaining parallel DDR connectivity and full feature set.
Why Choose MT46V32M16P-6T IT:F TR?
The MT46V32M16P-6T IT:F TR delivers a factual combination of 512 Mbit DDR SDRAM capacity, x16 organization, and industrial temperature operation in a 66‑TSSOP package. Its DDR architecture with internal DLL, DQS support, programmable burst lengths, and differential clock inputs provides the timing features needed for reliable parallel DDR memory implementations.
This device is appropriate for engineers and procurement teams specifying a board‑level DDR memory component that requires a defined supply range (2.3 V–2.7 V), specified timing grades, and a compact TSOP footprint for integration into temperature‑rated systems.
Request a quote or submit an RFQ for MT46V32M16P-6T IT:F TR to obtain pricing and availability information for your next design.