MT46V32M16P-6T:C

The MT46V32M16P-6T:C is a 512 Mbit parallel DRAM device built on SDRAM - DDR technology with a 32M × 16 memory organization. It provides a compact 66-TSSOP package and is intended for designs that require a parallel DDR DRAM memory element with defined timing, voltage and temperature characteristics.

Key value is provided through its DDR SDRAM architecture and targeted electrical and timing specifications, enabling predictable performance within the specified supply voltage and operating temperature range.

Key Features

• Memory Architecture 512 Mbit DRAM arranged as 32M × 16 using SDRAM - DDR technology for parallel memory implementations.
• Performance Supports a clock frequency of 167 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns to meet defined timing requirements.
• Power Operates from a nominal supply range of 2.3 V to 2.7 V, enabling use within low-voltage DDR system domains.
• Interface Parallel memory interface suitable for systems designed to integrate parallel DRAM devices.
• Package & Mounting Supplied in a 66-TSSOP (0.400", 10.16 mm width) package (66-TSOP) for board-mount integration where a compact linear package is required.
• Environmental / Temperature Range Specified for an operating ambient temperature range of 0°C to 70°C (TA).

Typical Applications

• Parallel DDR memory subsystems — Used as a 32M × 16 parallel DRAM component where 512 Mbit capacity and DDR timing are required.
• Embedded systems with parallel interfaces — Fits designs that require a low-voltage DDR DRAM in a 66-TSSOP footprint.
• Board-level memory expansion — Suitable for adding parallel DRAM capacity to boards constrained by package width and voltage domain.

Unique Advantages

• Defined DDR SDRAM architecture: Delivers DDR timing and organization (32M × 16) for predictable integration into parallel-memory designs.
• Compact 66-TSSOP package: Provides a narrow 10.16 mm width footprint suitable for space-constrained board layouts.
• Low-voltage operation: 2.3 V to 2.7 V supply range supports low-voltage system domains and consistent power budgeting.
• Known timing parameters: 167 MHz clock frequency, 700 ps access time and 15 ns write cycle time offer clear performance targets for system timing design.
• Specified operating range: 0°C to 70°C ambient rating provides clear thermal limits for typical commercial applications.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V32M16P-6T:C positions itself as a straightforward 512 Mbit DDR SDRAM component that combines a 32M × 16 organization with defined timing, voltage and temperature specifications. Its 66-TSSOP package and parallel interface make it suitable for designs that require a compact, low-voltage DDR memory element with predictable electrical characteristics.

This device is appropriate for engineers and procurement teams targeting systems that need a clearly specified parallel DRAM building block—offering integration simplicity, consistent timing parameters, and defined operating limits for reliable system implementation.

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