MT46V32M16P-75 IT:C

The MT46V32M16P-75 IT:C is a 512 Mbit parallel DRAM device implemented as DDR SDRAM with a 32M × 16 memory organization. It provides volatile, high-density memory in a compact 66‑TSSOP package for systems requiring parallel DDR memory.

Designed for applications that need a combination of density, defined timing, and extended temperature operation, the device offers a 133 MHz clock rate with access time and cycle characteristics suitable for synchronous memory subsystems.

Key Features

• Core / Memory Architecture DDR SDRAM technology in a 32M × 16 organization delivering a total of 512 Mbit of volatile DRAM.
• Performance 133 MHz clock frequency with a 750 ps access time and a 15 ns write cycle time (word page) for predictable synchronous timing.
• Power Operates from a 2.3 V to 2.7 V supply range, suitable for systems designed around low-voltage DDR signaling.
• Interface Parallel memory interface providing standard synchronous DRAM connectivity for parallel-memory controllers.
• Package Supplied in a 66‑TSSOP package (0.400" / 10.16 mm width) for space-efficient board-level integration.
• Temperature Range Specified for operation from −40 °C to 85 °C (TA), supporting designs that require extended ambient temperature tolerance.

Typical Applications

• Memory expansion in parallel-interface systems — Provides a compact 512 Mbit DDR SDRAM option for systems that implement parallel memory buses.
• Embedded controllers and processors — Acts as local volatile memory for embedded designs that accept a parallel DDR memory interface and require 32M × 16 organization.
• Industrial and temperature-challenged equipment — The −40 °C to 85 °C operating range supports deployment in environments with extended temperature requirements.

Unique Advantages

• High-density 512 Mbit capacity: Offers significant memory capacity in a single device to reduce component count for medium-density memory requirements.
• Parallel DDR architecture: Synchronous DDR SDRAM interface provides deterministic timing suitable for parallel memory controllers.
• Defined timing characteristics: 133 MHz clock, 750 ps access time, and 15 ns write cycle time enable predictable system timing and integration.
• Low-voltage operation: 2.3 V to 2.7 V supply compatibility supports modern low-voltage system designs.
• Compact 66‑TSSOP package: Small form-factor package simplifies board layout while delivering 16-bit data width.
• Extended operating temperature: −40 °C to 85 °C rating supports use in thermally demanding environments.

Why Choose MT46V32M16P-75 IT:C?

The MT46V32M16P-75 IT:C positions itself as a practical DDR SDRAM component for designs that require 512 Mbit of parallel volatile memory with well-defined performance parameters. Its combination of 32M × 16 organization, 133 MHz clock rate, and compact 66‑TSSOP packaging makes it suited to embedded and system-level designs where board space and predictable timing are important.

With a low-voltage supply range and an extended operating temperature window, this device is appropriate for customers seeking a straightforward, verifiable memory building block for systems using parallel DDR interfaces.

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