MT46V32M16P-75:C

The MT46V32M16P-75:C is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It provides synchronous DRAM operation with a 133 MHz clock frequency and an access time of 750 ps.

This device is supplied in a 66-TSSOP (10.16 mm width) package, operates from 2.3 V to 2.7 V, and is specified for an ambient temperature range of 0°C to 70°C. Its write cycle time (word page) is 15 ns, making it suitable for designs that require a compact, parallel DDR memory element within those electrical and thermal limits.

Key Features

• Core / Memory Architecture  512 Mbit capacity organized as 32M × 16; parallel DDR SDRAM architecture for synchronous data transfers.
• Performance  133 MHz clock frequency and 750 ps access time deliver predictable timing for parallel memory systems; write cycle time (word page) is 15 ns.
• Power  Operates from a 2.3 V to 2.7 V supply range, matching common low-voltage DDR memory rails.
• Package  Available in a 66-TSSOP package (0.400" / 10.16 mm width) for compact board-level integration.
• Operating Environment  Specified for ambient temperatures from 0°C to 70°C (TA), suitable for commercial-temperature applications.
• Interface  Parallel memory interface compatible with systems designed for 16-bit-wide DDR connections.

Typical Applications

• 16-bit Parallel Memory Implementations  Use as a 32M × 16 DDR memory device where a 16-bit parallel data path and 512 Mbit density are required.
• Compact Board-Level Designs  Suited to designs constrained to a 66-TSSOP package footprint (10.16 mm width).
• Low-Voltage DDR Systems  Applicable where a 2.3 V–2.7 V memory supply is mandated.
• Commercial-Temperature Electronics  Fits systems that operate within a 0°C to 70°C ambient temperature range.

Unique Advantages

• 512 Mbit, 32M × 16 Organization: Provides a defined density and data width for predictable memory mapping and system budgeting.
• Synchronous DDR Operation at 133 MHz: Enables timing-aligned transfers with a documented clock frequency and 750 ps access time.
• Low-Voltage Supply Range: 2.3 V–2.7 V operation supports common low-voltage DDR power domains.
• Compact 66-TSSOP Package: Small outline package helps conserve PCB area while maintaining a 16-bit parallel interface.
• Commercial Temperature Rating: Specified 0°C to 70°C ambient range for standard electronic applications.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16P-75:C delivers a defined 512 Mbit DDR SDRAM solution with a 32M × 16 organization, a 133 MHz clock, and documented timing (750 ps access time, 15 ns write cycle). Its 2.3 V–2.7 V supply range and 66-TSSOP packaging make it a compact option for systems that require a parallel 16-bit DDR memory with commercial-temperature operation.

This device is appropriate for designs that require explicit electrical and thermal specifications and a known package footprint, offering straightforward integration into systems that match its voltage, timing, and temperature parameters.

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