MT46V32M16P-75:C TR

IC DRAM 512MBIT PARALLEL 66TSOP
Part Description

IC DRAM 512MBIT PARALLEL 66TSOP

Quantity 717 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time750 psGradeCommercial
Clock Frequency133 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level4 (72 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M16P-75:C TR – IC DRAM 512MBIT PARALLEL 66TSOP

The MT46V32M16P-75:C TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It provides synchronous DRAM functionality in a 66‑TSSOP (0.400", 10.16 mm width) package for designs that require compact, board‑mounted volatile memory.

Targeted for systems that need a 512 Mbit DDR memory element, this device offers specified electrical and timing characteristics including a 133 MHz clock frequency, 750 ps access time, and a 2.3 V–2.7 V supply range.

Key Features

  • Core / Memory Architecture 512 Mbit DDR SDRAM organized as 32M × 16, providing parallel DRAM storage in a single device.
  • Performance Operates with a clock frequency of 133 MHz and an access time of 750 ps; write cycle time (word page) is specified at 15 ns.
  • Power Nominal supply voltage range of 2.3 V to 2.7 V, supporting systems designed around this DDR voltage window.
  • Package Supplied in a 66‑TSSOP (66‑TSOP) package, 0.400" (10.16 mm) width, suitable for standard surface‑mount assembly.
  • Operating Conditions Rated for an ambient operating temperature range of 0°C to 70°C (TA).
  • Interface Parallel memory interface for integration into parallel DDR memory buses and controller architectures.

Typical Applications

  • Embedded Memory Modules Use as board‑level DDR SDRAM where a 512 Mbit, 32M × 16 organization is required in a 66‑TSSOP footprint.
  • System Memory Expansion Designed for designs needing additional parallel DDR volatile storage at a 133 MHz clock rate and 2.3 V–2.7 V supply.
  • Compact Board Designs Fits applications constrained by board space that require a 66‑TSOP package and standard DDR timing characteristics.

Unique Advantages

  • Integrated 32M × 16 Organization: Provides a complete 512 Mbit memory element in a single device, simplifying BOM and layout.
  • Defined Timing Parameters: 133 MHz clock frequency with 750 ps access time and 15 ns write cycle time (word page) enables predictable timing analysis.
  • Narrow DDR Supply Window: 2.3 V–2.7 V supply range aligns with DDR voltage requirements for consistent power budgeting.
  • Space‑Efficient Package: 66‑TSSOP (0.400", 10.16 mm width) package supports compact surface‑mount implementations.
  • Specified Operating Range: Rated for 0°C to 70°C ambient operation for standard commercial temperature deployments.

Why Choose MT46V32M16P-75:C TR?

The MT46V32M16P-75:C TR provides a concise DDR SDRAM solution with defined organization, timing, and power requirements for designs that need 512 Mbit of parallel volatile memory. Its combination of a 32M × 16 architecture, 133 MHz clock specification, and compact 66‑TSSOP package makes it suitable for board‑level memory integration where those exact specifications are required.

This device is appropriate for engineers and procurement teams assembling systems that depend on verified DDR timing and electrical parameters, offering clear integration points for memory controllers and board layouts while maintaining a compact package footprint.

Request a quote or submit an inquiry to discuss availability, pricing, and lead times for the MT46V32M16P-75:C TR.

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