MT46V32M16TG-5B IT:J TR

The MT46V32M16TG-5B IT:J TR is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a 32M × 16 memory organization. It provides a parallel memory interface in a compact 66-TSSOP package for board-level integration.

This device targets designs that require a 512 Mbit parallel DDR memory solution operating from a 2.5 V to 2.7 V supply and supporting an operating temperature range of -40°C to 85°C.

Key Features

• Memory Architecture DDR SDRAM architecture with a 32M × 16 organization delivering a total memory size of 512 Mbit in DRAM format.
• Performance 200 MHz clock frequency with a 700 ps access time and a 15 ns write cycle time (word page) for predictable timing characteristics.
• Power Operating supply voltage range from 2.5 V to 2.7 V to match common DDR power domains.
• Interface Parallel memory interface suitable for designs that require parallel DDR connectivity.
• Package 66-TSSOP package (0.400", 10.16 mm width) for compact PCB placement and board-level mounting.
• Temperature Range Specified operating temperature range of -40°C to 85°C (TA) for use in environments with extended temperature requirements.

Typical Applications

• Board-level Memory Expansion Adds 512 Mbit of parallel DDR SDRAM capacity to PCBs and memory modules where a 32M × 16 organization is required.
• Parallel DDR Designs Suited for systems that implement parallel DDR interfaces and require DRAM-based temporary storage.
• Industrial Control Equipment The -40°C to 85°C operating range supports applications with extended temperature demands on board-level memory.

Unique Advantages

• 512 Mbit Density: Provides mid-range memory capacity with a 32M × 16 organization for balanced density and bus width.
• DDR SDRAM Architecture: Parallel DDR interface and timing characteristics (200 MHz clock, 700 ps access) suitable for designs requiring synchronous DRAM operation.
• Standard 66-TSSOP Package: Compact 66-TSSOP (0.400", 10.16 mm width) footprint eases placement in space-constrained PCBs.
• Wide Voltage Window: 2.5 V to 2.7 V supply range aligns with common DDR power rails for straightforward power integration.
• Extended Operating Temperature: Rated for -40°C to 85°C to support applications that operate across a broad temperature span.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16TG-5B IT:J TR combines DDR SDRAM architecture, a 32M × 16 organization and a 66-TSSOP footprint to deliver a compact, board-level 512 Mbit memory option. Its defined timing (200 MHz clock, 700 ps access, 15 ns write cycle) and 2.5–2.7 V supply range make it suitable for designs that require predictable parallel DDR memory behavior.

This device is appropriate for customers designing parallel DDR memory subsystems or adding mid-density DRAM to PCBs where package size, operating temperature range and standard DDR supply compatibility are important considerations.

For pricing, lead-time information or to request a formal quote, please contact sales to discuss availability and ordering options.