MT46V32M16TG-5B:C

The MT46V32M16TG-5B:C is a 512 Mbit parallel DRAM device implemented as DDR SDRAM with a 32M × 16 memory organization. It provides a parallel memory interface with a 200 MHz clock specification, operating from a 2.5 V to 2.7 V supply.

This device is suited for system designs that require a 512 Mbit DDR SDRAM element in a compact 66‑TSSOP (0.400", 10.16 mm width) package and an operating ambient range of 0°C to 70°C.

Key Features

• Memory Core 512 Mbit capacity organized as 32M × 16, implemented as DDR SDRAM for parallel memory applications.
• Performance 200 MHz clock frequency with a 700 ps access time and a write cycle time (word/page) of 15 ns, providing defined timing for system memory operations.
• Power Operates from a 2.5 V to 2.7 V supply range, matching systems designed around this voltage window.
• Package Supplied in a 66‑TSSOP package (0.400" / 10.16 mm width) for space-efficient PCB mounting.
• Environmental / Operating Range Specified for ambient operation from 0°C to 70°C (TA).
• Interface Parallel memory interface suitable for designs requiring a parallel DDR connection and timing.

Typical Applications

• Embedded system memory — Use as a 512 Mbit parallel DDR SDRAM element where a 32M × 16 organization and 200 MHz clocking meet system requirements.
• Buffer and frame storage — Suitable for buffering or temporary storage functions that rely on defined access time (700 ps) and 15 ns write cycle timing.
• Prototype and evaluation boards — Provides a standard 66‑TSSOP footprint for evaluation of parallel DDR memory designs in lab and development environments.

Unique Advantages

• 512 Mbit density in a compact package: Delivers substantial memory capacity in a 66‑TSSOP (10.16 mm width) footprint to save PCB area.
• Deterministic timing parameters: 700 ps access time and 15 ns write cycle time provide predictable timing for system memory planning.
• Standard voltage compatibility: 2.5 V–2.7 V supply range aligns with designs using industry-standard DDR voltage rails.
• Parallel DDR interface: 32M × 16 organization and parallel interface support conventional parallel memory architectures.
• Specified operating range: Rated for 0°C to 70°C ambient operation to match typical commercial-temperature applications.

Why Choose MT46V32M16TG-5B:C?

The MT46V32M16TG-5B:C positions itself as a straightforward 512 Mbit parallel DDR SDRAM option for designs that require a defined performance profile, including a 200 MHz clock, 700 ps access time, and a 15 ns write cycle. Its 66‑TSSOP package and 2.5 V–2.7 V supply compatibility make it suitable for compact boards and systems aligned to those voltage rails.

This device is ideal for engineers and procurement teams specifying a 32M × 16 DDR memory element with clear timing and thermal limits (0°C to 70°C). Backed by the manufacturer listing, it provides a consistent component choice for designs that require this exact memory organization and package form factor.

Request a quote to inquire about availability and pricing for the MT46V32M16TG-5B:C or to discuss volume and lead-time options.