MT46V32M16TG-5B:F TR

The MT46V32M16TG-5B:F TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface in a 66‑TSSOP package. It implements a pipelined double-data-rate architecture with source‑synchronous DQS and a DLL to support two data transfers per clock cycle.

This device targets designs that require a 512 Mbit parallel DDR memory element operating at up to 200 MHz clocking, offering programmable burst lengths, four internal banks for concurrent operation, and standard 2.5 V I/O signaling.

Key Features

• Core / Architecture Internal pipelined DDR architecture provides two data accesses per clock cycle and includes a DLL for timing alignment.
• Memory Organization 512 Mbit capacity arranged as 32M × 16 with four internal banks (MT46V32M16 configuration).
• Performance Clock frequency up to 200 MHz (speed grade -5B) with an access time of 700 ps and a write cycle (word page) time of 15 ns.
• Interface & Timing Differential clock inputs (CK/CK#), bidirectional data strobe (DQS) transmitted/received with data (two DQS for x16), programmable burst lengths (2, 4, 8), and data mask (DM) support (two DM for x16).
• Power Supply voltage range 2.5 V to 2.7 V with 2.5 V I/O (SSTL_2 compatible as noted in device documentation).
• Package & Temperature 66‑TSSOP package (0.400", 10.16 mm width) and commercial operating temperature 0°C to +70°C (TA).
• System Reliability & Controls Auto refresh and self refresh options, concurrent auto precharge support, and four-bank organization for concurrent operation and improved throughput.

Typical Applications

• System memory for embedded platforms Provides 512 Mbit DDR capacity in a compact 66‑TSSOP footprint for embedded designs requiring parallel DDR memory.
• Data buffering and capture Source‑synchronous DQS and two‑transfers‑per‑clock DDR architecture support high‑rate data capture and buffering tasks.
• Memory expansion on space‑constrained PCBs The 66‑TSSOP (10.16 mm width) package offers a compact form factor for board-level memory expansion where socket or area constraints exist.

Unique Advantages

• Double‑data‑rate throughput: Two data transfers per clock cycle increase effective bandwidth without increasing core clock frequency.
• Byte‑level strobes and masking: DQS per byte and DM per byte (x16 has two of each) enable accurate source‑synchronous capture and selective write masking.
• Flexible timing options: Programmable burst lengths (2, 4, 8) and defined speed grades support multiple timing configurations to match system requirements.
• Commercial temperature rating: Specified for 0°C to +70°C operation, suitable for standard commercial environments.
• Standard 2.5 V I/O: 2.5 V signaling (SSTL_2 compatible) aligns with common DDR I/O standards noted in the device documentation.
• Compact industry package: 66‑TSSOP package with longer leads for improved reliability as described in device documentation.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

This MT46V32M16TG-5B:F TR DDR SDRAM device combines a 512 Mbit density and 32M × 16 organization with DDR pipelined architecture, source‑synchronous DQS, and a DLL for reliable timing alignment. Its up-to-200 MHz capability (speed grade -5B), programmable burst lengths, and four-bank internal structure make it suitable for designs that require parallel DDR memory with deterministic timing and burst flexibility.

Designers building commercial-temperature systems that need compact 2.5 V DDR memory in a 66‑TSSOP package will find this device aligns with board-level space constraints and standard signaling. The device documentation provides detailed timing, refresh, and signaling information to support integration and system-level timing closure.

Request a quote or submit a pricing inquiry to obtain availability, lead time, and ordering information for the MT46V32M16TG-5B:F TR.