MT46V32M16TG-5B:J TR

The MT46V32M16TG-5B:J TR is a 512 Mbit parallel DRAM device using SDRAM - DDR technology in a 32M × 16 organization. It delivers a 200 MHz clock frequency and is supplied in a 66-TSSOP package for board-level integration.

Designed for systems that require parallel DDR SDRAM memory, the device provides defined electrical and timing characteristics including a 2.5V–2.7V supply range and a 0°C to 70°C operating temperature range.

Key Features

• Memory Core  512 Mbit DRAM organized as 32M × 16, providing a parallel memory array suitable for designs requiring this density and organization.
• Technology and Interface  SDRAM - DDR technology with a parallel memory interface and a 200 MHz clock frequency for synchronous DDR operation.
• Timing  Access time specified at 700 ps and a write cycle time (word page) of 15 ns, offering defined read/write timing behavior for system timing budgets.
• Power  Nominal supply voltage range of 2.5V to 2.7V, matching system rails designed for this DDR memory family.
• Package and Mounting  Supplied in a 66-TSSOP (0.400", 10.16 mm width) package suitable for surface-mount board assembly.
• Operating Temperature  Specified operating ambient temperature range of 0°C to 70°C (TA) for standard commercial applications.

Typical Applications

• Embedded memory subsystems  Use as a parallel DDR SDRAM component where a 512 Mbit density and 32M × 16 organization are required for system memory expansion.
• Board-level DRAM replacement  Suitable for designs needing a 66-TSSOP packaged DDR memory device with defined timing and voltage characteristics.
• Standard commercial electronics  Applicable in commercial-temperature-range equipment that operates within 0°C to 70°C and uses a 2.5V–2.7V DDR memory supply.

Unique Advantages

• Defined DDR SDRAM architecture: SDRAM - DDR technology with a parallel interface and 200 MHz clock frequency aligns with designs requiring synchronous DDR memory behavior.
• Known density and organization: 512 Mbit capacity in a 32M × 16 arrangement makes capacity planning and memory mapping straightforward for system designers.
• Clear timing specifications: 700 ps access time and 15 ns write cycle time (word page) provide measurable parameters for integration into timing budgets.
• Standard supply and package: 2.5V–2.7V supply range and 66-TSSOP package (0.400", 10.16 mm) simplify PCB layout and supply rail design.
• Commercial temperature rating: 0°C to 70°C operating range suits a wide range of standard commercial applications.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16TG-5B:J TR positions itself as a straightforward 512 Mbit DDR SDRAM device with explicit electrical, timing, and packaging specifications for system-level integration. Its combination of 32M × 16 organization, 200 MHz clock frequency, and measured timing values supports predictable memory behavior in designs that require parallel DDR DRAM.

This device is suitable for designers and procurement teams specifying a commercial-temperature, 2.5V–2.7V parallel DDR memory component in a 66-TSSOP package, offering clear parameters for layout, power, and timing validation.

Request a quote or submit an inquiry for pricing and availability for MT46V32M16TG-5B:J TR to obtain lead-time and purchasing information.