MT46V32M16TG-6T IT:F

The MT46V32M16TG-6T IT:F is a 512 Mbit DDR SDRAM organized as 32M × 16, delivered in a 66-pin TSSOP (0.400", 10.16 mm width) package. It implements a double-data-rate architecture with a parallel memory interface and is specified for industrial temperature operation (‑40°C to +85°C).

Engineered for systems that require a compact, parallel DDR memory device, this part supports source-synchronous data capture, programmable burst lengths, and internal banked operation to enable high-throughput memory access at the specified clock rates.

Key Features

• DDR architecture  Internal, pipelined double-data-rate (DDR) operation provides two data accesses per clock cycle.
• Memory organization & size  512 Mbit capacity, organized as 32M × 16 with four internal banks for concurrent operation.
• Parallel memory interface  Parallel DQ interface with bidirectional data strobe (DQS) transmitted/received with data; x16 devices include two DQS lines (one per byte) and two data mask (DM) signals.
• Timing and performance  Rated for a 167 MHz clock frequency (speed grade -6T), with an access time listed as 700 ps and a write cycle time (word page) of 15 ns.
• Clocking and alignment  Differential clock inputs (CK/CK#) with DLL to align DQ and DQS transitions; DQS is edge-aligned for reads and center-aligned for writes.
• Programmable bursts & refresh  Supports programmable burst lengths of 2, 4, or 8 and standard auto-refresh (8K refresh cycles).
• Power supply  Operates from a supply range of 2.3 V to 2.7 V (VDD/VDDQ nominal 2.5 V variants documented in the datasheet).
• Package and temperature  66‑pin TSSOP (0.400", 10.16 mm width) package; industrial temperature rating of ‑40°C to +85°C (TA).

Typical Applications

• Industrial embedded systems  Provides rugged DDR memory capability for designs operating across an industrial temperature range (‑40°C to +85°C).
• Board-level memory expansion  Compact 66‑TSSOP package enables adding 512 Mbit DDR SDRAM to space-constrained PCBs requiring a parallel DDR interface.
• High-throughput data buffering  DDR transfers with DQS source-synchronous capture and programmable burst lengths support burst-oriented read/write buffering.

Unique Advantages

• Compact TSOP footprint: 66‑pin TSSOP (10.16 mm width) offers a small form factor for board-level memory integration where PCB space is limited.
• Industrial temperature rating: Specified operation from ‑40°C to +85°C supports deployment in temperature-demanding environments.
• Source-synchronous data capture: Bidirectional DQS aligned with data simplifies reliable high-speed reads and writes on parallel DDR buses.
• Flexible timing options: Programmable burst lengths (2, 4, 8) and internal DLL support adaptable timing strategies for different system requirements.
• Standard DDR feature set: Differential clocks, four internal banks, data masks, and auto-refresh support common DDR memory control schemes.

Why Choose MT46V32M16TG-6T IT:F?

The MT46V32M16TG-6T IT:F is positioned as a compact, industrial-temperature DDR SDRAM device that delivers parallel DDR performance in a 66‑pin TSSOP package. Its 512 Mbit density, source-synchronous DQS, and programmable burst capabilities make it suitable for designs that require reliable, high-throughput board-level memory in a small footprint.

This device is best suited for engineers and procurement teams specifying a 32M × 16 DDR SDRAM with a 2.3–2.7 V supply range and industrial temperature tolerance, offering straightforward integration into parallel DDR memory designs and systems that require controlled timing, refresh, and banked memory operation.

If you would like pricing or availability for the MT46V32M16TG-6T IT:F, request a quote or submit an inquiry and our team will assist with your requirements.