MT46V32M16TG-6T:C

The MT46V32M16TG-6T:C is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface and a 32M × 16 organization. It is supplied in a 66-TSSOP package and is specified for operation from 0°C to 70°C with a supply voltage range of 2.3 V to 2.7 V.

With a clock frequency rating of 167 MHz, an access time of 700 ps and a word/page write cycle time of 15 ns, this device targets board-level designs that require a 512 Mbit parallel DDR memory element in a compact 66-TSOP footprint.

Key Features

• Core – DDR SDRAM Architecture  Device uses DDR SDRAM technology in a parallel memory format, organized as 32M × 16 for 512 Mbit capacity.
• Performance  Rated clock frequency of 167 MHz, 700 ps access time and 15 ns write cycle time (word/page) for deterministic timing characteristics.
• Power  Operating supply voltage specified at 2.3 V to 2.7 V to match designs with low-voltage DDR power rails.
• Package  Supplied in a 66-TSSOP (66-TSOP) package with a 0.400" (10.16 mm) body width for compact board-level integration.
• Environmental Range  Ambient operating temperature range specified as 0°C to 70°C (TA).

Typical Applications

• Parallel DDR memory designs  Use as a 512 Mbit parallel DDR SDRAM component where a 32M × 16 organization is required on the memory bus.
• Board-level memory expansion  Add 512 Mbit of volatile storage in systems needing a compact 66-TSSOP package and a 2.3 V–2.7 V supply.
• Space-constrained PCB implementations  Integrate into designs that require a narrow 0.400" (10.16 mm) TSSOP package footprint.

Unique Advantages

• 512 Mbit density in 32M × 16 organization: Provides a clearly defined memory topology for parallel DDR implementations.
• Defined high-speed timing: 167 MHz clock rating, 700 ps access time and 15 ns write cycle time give explicit timing targets for system designers.
• Low-voltage operation: 2.3 V–2.7 V supply range supports integration with low-voltage DDR power rails.
• Compact 66-TSSOP package: 66-TSOP (0.400", 10.16 mm width) reduces board area for board-level memory additions.
• Specified operating temperature: 0°C–70°C ambient rating provides a clear thermal envelope for deployment.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V32M16TG-6T:C offers a defined 512 Mbit DDR SDRAM option with explicit electrical, timing and mechanical specifications—32M × 16 organization, 167 MHz clock frequency, 2.3 V–2.7 V supply, and a 66-TSSOP package. These concrete parameters make it straightforward to evaluate and integrate into parallel DDR memory subsystems and board-level memory expansions.

This device is suited for designs that require a compact TSSOP footprint, a defined ambient temperature range (0°C–70°C), and specific timing characteristics for system memory planning and verification.

Request a quote or contact sales to inquire about availability, lead times and pricing for MT46V32M16TG-6T:C.