MT46V32M16TG-75 IT:C

The MT46V32M16TG-75 IT:C is a 512 Mbit DDR SDRAM device organized as 32M × 16 with a parallel memory interface. It implements DDR SDRAM technology and is offered in a 66‑TSSOP (0.400", 10.16mm width) package for board-level integration.

With a 133 MHz clock frequency, 750 ps access time and a 2.3 V–2.7 V supply range, this device is targeted at designs that require parallel DDR memory capacity and standard DDR timing characteristics within an extended operating temperature range of −40°C to 85°C.

Key Features

• Memory Type & Technology DDR SDRAM (volatile) implemented as a parallel DRAM device.
• Density & Organization 512 Mbit capacity arranged as 32M × 16 bits for moderate-density memory applications.
• Performance 133 MHz clock frequency with a 750 ps access time and a 15 ns write cycle time (word/page).
• Power Operates from a 2.3 V to 2.7 V supply range.
• Package 66‑TSSOP package (0.400", 10.16 mm width) for surface-mount PCB implementations.
• Temperature Range Rated for operation from −40°C to 85°C (TA).

Typical Applications

• Parallel Memory Subsystems Use as a 512 Mbit parallel DDR SDRAM component in systems that require 32M × 16 memory organization and standard DDR timing.
• Embedded Boards Integration into board-level designs where a 66‑TSSOP package and 2.3 V–2.7 V supply are suitable.
• Industrial Equipment Deploy in equipment operating within −40°C to 85°C that needs moderate-density parallel DRAM.

Unique Advantages

• Standard DDR SDRAM architecture: Provides a familiar parallel DDR interface and timing (133 MHz) for straightforward integration into DDR-based memory subsystems.
• Moderate high density in a compact package: 512 Mbit (32M × 16) capacity in a 66‑TSSOP footprint enables denser memory without large package overhead.
• Wide operating temperature: Rated from −40°C to 85°C to support a range of environmental conditions.
• Low-voltage operation: 2.3 V–2.7 V supply reduces platform power requirements compared with higher-voltage alternatives.
• Deterministic timing metrics: Specified 750 ps access time and 15 ns write cycle time for predictable memory performance.
• Surface-mount packaging: 66‑TSSOP package supports automated PCB assembly and compact board layouts.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16TG-75 IT:C positions itself as a compact, moderate-density DDR SDRAM solution for designs needing a 32M × 16 parallel memory organization, predictable timing, and low-voltage operation. Its 66‑TSSOP package and extended temperature rating make it suitable for board-level implementations where space and environmental robustness are considerations.

This device is appropriate for engineers and procurement teams specifying DDR parallel DRAM capacity with defined timing and voltage parameters, delivering a straightforward memory building block for systems that require the listed electrical and mechanical characteristics from a Micron Technology Inc. component.

Request a quote or contact sales to inquire about pricing, availability and lead times for MT46V32M16TG-75 IT:C. Include the part number and required quantity to receive a prompt response.