MT46V32M16TG-75 IT:C TR
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 1,256 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Industrial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16TG-75 IT:C TR – IC DRAM 512Mbit Parallel 66-TSSOP
The MT46V32M16TG-75 IT:C TR is a 512 Mbit volatile DRAM device implemented as 32M × 16 using SDRAM - DDR architecture with a parallel memory interface. It provides targeted memory capacity and organization for systems requiring parallel DDR SDRAM.
This device operates with a 133 MHz clock frequency, specified 750 ps access time and 15 ns write cycle time (word page). It supports a 2.3 V to 2.7 V supply, an operating temperature range of −40 °C to 85 °C (TA), and is supplied in a 66‑TSSOP (0.400", 10.16 mm width) package.
Key Features
- Memory Core 512 Mbit DRAM organized as 32M × 16 for parallel memory architectures.
- Technology SDRAM - DDR memory technology with a parallel interface.
- Performance 133 MHz clock frequency, 750 ps access time and a 15 ns write cycle time (word page).
- Power Nominal supply voltage range: 2.3 V to 2.7 V.
- Package 66‑TSSOP (0.400", 10.16 mm width) supplier device package.
- Temperature Range Operating temperature: −40 °C to 85 °C (TA).
Unique Advantages
- High-density 512 Mbit capacity: Provides substantial memory in a 32M × 16 organization for designs that require on-board DRAM.
- DDR SDRAM architecture: Parallel SDRAM - DDR technology with a 133 MHz clock and 750 ps access time for timing-sensitive memory operations.
- Defined timing characteristics: 15 ns write cycle time (word page) supports predictable write behavior for system timing design.
- Low-voltage operation: 2.3 V to 2.7 V supply range accommodates low-voltage system rails.
- Extended temperature range: −40 °C to 85 °C operation supports applications across common commercial and industrial ambient conditions.
- Standard 66‑TSSOP package: 66-pin TSSOP (10.16 mm width) for board-level compatibility where this package is required.
Why Choose MT46V32M16TG-75 IT:C TR?
The MT46V32M16TG-75 IT:C TR delivers a clear combination of capacity, DDR SDRAM architecture and defined timing characteristics in a compact 66‑TSSOP package. Its electrical and thermal specifications—2.3 V to 2.7 V supply and −40 °C to 85 °C operating range—make it suitable for systems that require a stable, low-voltage parallel DRAM solution with predictable access and write timing.
This device is appropriate for designs that need a 512 Mbit parallel DDR SDRAM with 32M × 16 organization and the specific clock and timing parameters provided. Its package and operating ranges support integration into production designs that match these requirements.
Request a quote or contact sales to discuss pricing, lead time and availability for the MT46V32M16TG-75 IT:C TR.
