MT46V32M16TG-75 L:C

The MT46V32M16TG-75 L:C is a 512 Mbit volatile memory device implemented as DDR SDRAM with a parallel interface. It is organized as 32M × 16 and delivers timing characteristics suitable for designs that require predictable access and write-cycle behavior.

This device is targeted at board-level memory implementations where compact 66-TSSOP packaging, 2.3–2.7 V supply operation, and operation across a 0 °C to 70 °C ambient range are required.

Key Features

• Memory Architecture DDR SDRAM architecture with a parallel memory interface; memory organization of 32M × 16 yielding a total capacity of 512 Mbit.
• Performance 133 MHz clock frequency, 750 ps access time and a write cycle time (word page) of 15 ns for time-sensitive memory operations.
• Power Nominal supply range of 2.3 V to 2.7 V to support lower-voltage system rails.
• Package 66-TSSOP package (0.400", 10.16 mm width) for compact board mounting and predictable footprint.
• Operating Range Specified operating ambient temperature range of 0 °C to 70 °C (TA).
• Memory Type Volatile DRAM formatted as 512 Mbit parallel memory.

Typical Applications

• Parallel-Interface Memory Expansion Board-level memory implementations that require a 512 Mbit parallel DDR SDRAM organized as 32M × 16.
• Compact PCB Designs Systems needing a small-footprint 66-TSSOP device with defined mechanical dimensions (0.400" / 10.16 mm width).
• Low-Voltage Systems Designs operating on 2.3 V–2.7 V rails where matching memory supply requirements is important.

Unique Advantages

• 512 Mbit Density in 32M × 16 Organization: Provides a straightforward memory map for parallel data paths and predictable addressing.
• DDR SDRAM Timing: 133 MHz clock and 750 ps access time support designs that require defined read latency and write-cycle timing.
• Compact 66-TSSOP Package: Enables dense PCB layouts while retaining a standardized footprint for assembly.
• Low Supply Voltage: Operates from 2.3 V to 2.7 V to align with lower-voltage system power domains.
• Specified Ambient Range: Rated for 0 °C to 70 °C operation to match common commercial temperature environments.
• Manufacturer Identification: Produced by Micron Technology Inc., offering traceable sourcing for design and procurement.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V32M16TG-75 L:C combines a 512 Mbit DDR SDRAM architecture with clear timing and power specifications that make it well suited for designs requiring a parallel memory interface, compact 66-TSSOP packaging, and operation on 2.3–2.7 V rails. Its defined access and write-cycle timings aid predictable memory subsystem behavior.

This device is appropriate for designers and procurement teams specifying board-level DRAM where capacity, package footprint, and commercial temperature operation are key selection criteria. Manufactured by Micron Technology Inc., it provides a documented option for stable sourcing in volume designs.

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