MT46V32M16TG-75:C

The MT46V32M16TG-75:C is a 512 Mbit volatile DDR SDRAM organized as 32M × 16, supplied by Micron Technology Inc. It provides parallel memory in a compact 66-TSSOP (0.400", 10.16 mm width) package and operates from 2.3 V to 2.7 V.

This device is intended for designs that require 512 Mbit of parallel DDR memory with a 16-bit data path and conventional commercial temperature operation (0 °C to 70 °C). Key performance parameters include a 133 MHz clock frequency and an access time of 750 ps.

Key Features

• Memory Core 512 Mbit DDR SDRAM organized as 32M × 16 to support 16-bit parallel data paths.
• Performance 133 MHz clock frequency with a specified access time of 750 ps and a write cycle time (word/page) of 15 ns for predictable timing behavior.
• Power Low-voltage operation with a supply range of 2.3 V to 2.7 V.
• Package 66-TSSOP (0.400", 10.16 mm width) package for board-level integration where space and standard TSSOP routing are required.
• Operating Range Commercial temperature operation specified from 0 °C to 70 °C (TA).
• Interface Parallel memory interface suitable for systems designed around parallel DDR SDRAM architectures.

Typical Applications

• Parallel DDR memory for embedded systems — Provides 512 Mbit of DDR SDRAM in a 32M × 16 organization for embedded designs requiring a parallel 16-bit data bus.
• Board-level memory expansion — Compact 66-TSSOP package allows integration where board space and standard TSSOP footprint are constraints.
• Buffer and frame storage — Use as parallel volatile storage where 133 MHz clocking and 750 ps access time meet timing requirements.

Unique Advantages

• Standard parallel DDR architecture: 32M × 16 organization provides a straightforward 16-bit parallel interface for system designers.
• Compact TSSOP package: 66-TSSOP (0.400", 10.16 mm) package supports density on PCB layouts while maintaining conventional TSSOP routing.
• Controlled timing characteristics: 133 MHz clock frequency, 750 ps access time, and 15 ns write cycle time (word/page) provide defined performance metrics for timing-sensitive designs.
• Low-voltage operation: 2.3 V to 2.7 V supply range supports designs targeted at lower-voltage DDR domains.
• Commercial temperature rating: Specified operation from 0 °C to 70 °C for standard commercial applications.

Why Choose MT46V32M16TG-75:C?

The MT46V32M16TG-75:C positions itself as a straightforward, specification-driven 512 Mbit DDR SDRAM solution for designs requiring a parallel 16-bit memory interface in a compact 66-TSSOP package. Its combination of 133 MHz clocking, 750 ps access time, and defined write cycle timing supports predictable integration into timing-sensitive boards.

This Micron-supplied device is suited to engineers and procurement teams specifying a 512 Mbit parallel DDR memory device with a low-voltage supply range and commercial temperature operation. It provides clear electrical, timing, and packaging parameters to support design validation and BOM definition.

Request a quote or submit an inquiry for pricing and availability to evaluate the MT46V32M16TG-75:C for your next design.