MT46V32M16TG-75Z:C

The MT46V32M16TG-75Z:C is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It is supplied in a 66-TSSOP (0.400", 10.16 mm width) package and operates from a 2.3 V to 2.7 V supply.

This device targets systems that require compact, parallel DDR memory with defined timing characteristics, offering a 133 MHz clock frequency, 750 ps access time, and a 0°C to 70°C ambient operating range for temperature-constrained designs.

Key Features

• Memory Core and Interface DDR SDRAM architecture organized as 32M × 16 for a total of 512 Mbit with a parallel memory interface.
• Performance 133 MHz clock frequency, 750 ps access time and a 15 ns write cycle time (word page) provide specified timing for system memory operations.
• Voltage Operates from a 2.3 V to 2.7 V supply, matching low-voltage DDR system rails.
• Package 66-TSSOP (0.400", 10.16 mm width) supplier device package suitable for space-constrained PCBs.
• Memory Characteristics Volatile DRAM format with standard DDR timing parameters and parallel interface topology.
• Operating Range Specified ambient temperature range of 0°C to 70°C (TA) for designs within commercial temperature limits.

Typical Applications

• Embedded Systems Provides 512 Mbit of parallel DDR SDRAM for embedded controllers and modules requiring 32M × 16 memory organization and defined timing.
• Consumer Electronics Suitable for consumer devices operating within a 0°C–70°C ambient range that require low-voltage (2.3 V–2.7 V) DDR memory in a compact 66-TSSOP footprint.
• Industrial Control Fits industrial control modules that need a parallel DDR memory interface with 133 MHz clocking and 15 ns write cycle timing.

Unique Advantages

• Compact 66-TSSOP Package: Small footprint (0.400", 10.16 mm width) reduces board area for space-constrained designs.
• Defined DDR Performance: 133 MHz clock frequency, 750 ps access time and 15 ns write cycle time provide predictable timing for system integration.
• Standard Parallel Interface: Parallel memory interface and 32M × 16 organization simplify integration into designs that use parallel DRAM topologies.
• Low-Voltage Operation: 2.3 V–2.7 V supply range enables compatibility with low-voltage DDR power rails.
• Commercial Temperature Range: 0°C–70°C operating range aligns with typical commercial application environments.

Why Choose MT46V32M16TG-75Z:C?

The MT46V32M16TG-75Z:C offers a compact, defined-capacity DDR SDRAM option with a 32M × 16 organization and parallel interface, delivering 512 Mbit of volatile memory in a 66-TSSOP package. Its specified timing (133 MHz clock, 750 ps access, 15 ns write cycle) and low-voltage operation (2.3 V–2.7 V) make it well suited for designs that require predictable DDR performance within a commercial temperature range.

Manufactured by Micron Technology Inc., this device is appropriate for designers and buyers seeking a standardized parallel DDR memory component for embedded, consumer, or industrial applications where package size, timing clarity, and voltage compatibility are primary selection criteria.

Request a quote or submit a pricing inquiry to obtain availability and volume pricing for the MT46V32M16TG-75Z:C.