MT46V32M4TG-6T:D TR
| Part Description |
IC DRAM 128MBIT PAR 66TSOP |
|---|---|
| Quantity | 540 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 4 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT46V32M4TG-6T:D TR – IC DRAM 128MBIT PAR 66TSOP
The MT46V32M4TG-6T:D TR is a 128 Mbit volatile DDR SDRAM device organized as 32M x 4 with a parallel memory interface. It provides deterministic memory timing and a compact footprint for systems that require on-board DRAM density and parallel access.
Key electrical and timing characteristics include a 167 MHz clock frequency, 700 ps access time, a 15 ns write cycle time (word/page), and a supply voltage range of 2.3 V to 2.7 V. The device is supplied in a 66-TSSOP package (0.400", 10.16 mm width) and is specified for operation from 0°C to 70°C.
Key Features
- Memory Type & Organization Volatile DDR SDRAM organized as 32M x 4, providing a total memory size of 128 Mbit.
- Performance Operates at a clock frequency of 167 MHz with a 700 ps access time and a 15 ns write cycle time (word/page) for predictable timing.
- Interface Parallel memory interface for direct bus-style integration with host controllers that require parallel DRAM access.
- Power Supply voltage range of 2.3 V to 2.7 V to match systems designed for DDR signaling levels.
- Package 66-TSSOP (0.400", 10.16 mm width) package for space-efficient board-level mounting.
- Operating Temperature Specified for operation from 0°C to 70°C (TA).
Unique Advantages
- Predictable timing performance: 167 MHz clock rate with a 700 ps access time and 15 ns write cycle provides clear timing margins for system design.
- Parallel DDR architecture: Parallel interface and DDR technology enable straightforward interfacing where parallel memory access is required.
- Compact package option: 66-TSSOP package (0.400", 10.16 mm) reduces board space while keeping pin access for parallel connections.
- Defined supply range: Operates from 2.3 V to 2.7 V, matching designs that use these DDR supply levels.
- Clear operating window: Rated for 0°C to 70°C, suitable for applications operating within that ambient temperature range.
Why Choose MT46V32M4TG-6T:D TR?
The MT46V32M4TG-6T:D TR positions itself as a focused DDR SDRAM option where a 128 Mbit, 32M x 4 organization and parallel interface are required. Its specified clock, access time and write cycle numbers enable engineers to plan deterministic memory timing, while the 66-TSSOP package keeps PCB footprint constrained.
Manufactured by Micron Technology Inc., this device is appropriate for designs that need a defined supply voltage range (2.3 V–2.7 V) and an operating temperature window of 0°C to 70°C. It is suitable for integration into systems that require compact, parallel-access DRAM with explicit electrical and timing specifications.
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