MT46V32M16TG-75E:C TR
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 458 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16TG-75E:C TR – IC DRAM 512MBIT PARALLEL 66TSOP
The MT46V32M16TG-75E:C TR is a 512 Mbit DDR SDRAM organized as 32M × 16 with a parallel memory interface. It provides synchronous DDR operation at a clock frequency of 133 MHz in a compact 66‑TSSOP package.
This device targets designs that require mid-density, parallel DDR volatile memory with defined timing, voltage and temperature operating ranges for integration into embedded systems and electronic modules.
Key Features
- Memory Type & Architecture DDR SDRAM, organized as 32M × 16 for a total memory size of 512 Mbit; parallel memory interface suitable for systems expecting word/page access.
- Performance / Timing Clock frequency of 133 MHz and write cycle time (word page) of 15 ns; access time specified at 750 ps.
- Power Operates from a supply voltage range of 2.3 V to 2.7 V, supporting low-voltage DDR system designs.
- Package Supplied in a 66‑TSSOP (0.400", 10.16 mm width) package for surface-mount PCB integration.
- Operating Range Rated for ambient operating temperatures from 0 °C to 70 °C (TA).
Unique Advantages
- Mid‑density memory capacity: 512 Mbit (32M × 16) provides a balance of storage and board area for systems needing moderate DRAM capacity.
- Parallel DDR interface: Standard DDR SDRAM organization supports designs that require parallel memory access and established memory control timing.
- Defined timing specifications: 133 MHz clock frequency, 750 ps access time and 15 ns write cycle time enable predictable performance budgeting during system design.
- Low‑voltage operation: 2.3 V to 2.7 V supply range accommodates low-voltage DDR system power domains.
- Compact surface‑mount package: 66‑TSSOP (10.16 mm width) allows integration into space-constrained PCBs.
- Commercial temperature rating: Specified 0 °C to 70 °C operating range for typical commercial/industrial ambient conditions.
Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?
The MT46V32M16TG-75E:C TR positions itself as a straightforward DDR SDRAM solution offering 512 Mbit capacity, defined timing characteristics and a compact 66‑TSSOP package. Its documented clock, access and write timing, together with a clear supply voltage and operating temperature range, make it suitable for designs that require verifiable memory performance and predictable integration.
This device is appropriate for engineers and procurement teams specifying mid-density parallel DDR memory where package footprint, voltage compatibility and explicit timing data are key selection criteria.
Request a quote or submit an RFQ for pricing and availability to evaluate MT46V32M16TG-75E:C TR for your next design.
