MT46V32M16TG-75Z:C TR
| Part Description |
IC DRAM 512MBIT PARALLEL 66TSOP |
|---|---|
| Quantity | 1,913 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 750 ps | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M16TG-75Z:C TR – 512Mbit DDR SDRAM, 66‑TSSOP
The MT46V32M16TG-75Z:C TR is a 512 Mbit volatile memory device implemented as DDR SDRAM with a 32M × 16 organization and a parallel memory interface. It is supplied in a 66‑TSSOP package and is specified for operation at a 133 MHz clock frequency.
Key device-level characteristics include a 750 ps access time, a 15 ns write cycle time (word page), and a nominal supply range of 2.3 V to 2.7 V. The device is specified for ambient operation from 0°C to 70°C (TA).
Key Features
- Memory Architecture 512 Mbit capacity organized as 32M × 16 with a parallel DDR SDRAM architecture.
- Performance and Timing 133 MHz clock frequency with 750 ps access time and a 15 ns write cycle time (word page) for deterministic timing characteristics.
- Power Operates from a 2.3 V to 2.7 V supply range.
- Package 66‑TSSOP (0.400", 10.16 mm width) surface-mount package for compact PCB implementation.
- Memory Type Volatile DRAM (SDRAM - DDR) memory format with a parallel memory interface.
- Operating Temperature Rated for ambient temperatures from 0°C to 70°C (TA).
Unique Advantages
- High-density in a compact package: 512 Mbit capacity delivered in a 66‑TSSOP footprint allows space-efficient board layouts.
- Parallel DDR interface at 133 MHz: Enables integration into designs that require synchronous parallel memory operation at the specified clock rate.
- Deterministic timing: 750 ps access time and 15 ns write cycle time provide explicit timing parameters for system-level timing analysis.
- Standard supply range: 2.3 V to 2.7 V supply requirement aligns with common DDR power rails for straightforward power design.
- Commercial temperature rating: Specified 0°C to 70°C operating range for systems targeting standard ambient environments.
Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?
The MT46V32M16TG-75Z:C TR positions as a straightforward 512 Mbit DDR SDRAM component intended for designs requiring a 32M × 16 parallel memory organization, explicit timing specifications, and a compact 66‑TSSOP package. Its defined access and write timings combined with a 133 MHz clock specification support predictable memory behavior in board-level integration.
This device is suitable for engineers and procurement teams specifying DDR SDRAM at the 512 Mbit density level with a 2.3 V–2.7 V supply and a commercial ambient operating range. Its package and electrical characteristics make it a direct choice where the listed specifications match system requirements.
Request a quote or contact sales to obtain pricing, availability, and ordering information for the MT46V32M16TG-75Z:C TR.
