MT46V32M8BG-6:GTR
| Part Description |
IC DRAM 256MBIT PAR 60FBGA |
|---|---|
| Quantity | 308 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (8x14) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-FBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V32M8BG-6:GTR – DDR SDRAM 256Mbit, 60‑FBGA
The MT46V32M8BG-6:GTR is a 256 Mbit DDR SDRAM organized as 32M × 8 with a parallel memory interface in a 60‑ball FBGA package. It implements a double-data-rate, pipelined architecture with source-synchronous data capture and internal DLL to support two data transfers per clock cycle.
Designed for commercial-temperature systems (0°C to 70°C), this device delivers DDR performance at a 167 MHz clock rate (speed grade -6, CL = 2.5) with a 2.3 V to 2.7 V supply range and a compact 8 mm × 14 mm FBGA footprint.
Key Features
- Core / Architecture Internal, pipelined DDR architecture providing two data accesses per clock cycle and a DLL to align DQ/DQS with CK.
- Memory Organization 256 Mbit capacity organized as 32M × 8 with four internal banks for concurrent operation.
- Data Interface Parallel DDR interface with bidirectional data strobe (DQS) transmitted/received with data and differential clock inputs (CK/CK#).
- Performance & Timing Rated for a 167 MHz clock (speed grade -6, CL = 2.5), access window details including a 700 ps access time and a 15 ns write cycle time for word/page operations.
- Burst & Refresh Programmable burst lengths (2, 4, 8) and support for auto refresh (8K refresh cycles; standard commercial refresh timing provided).
- Voltage & I/O Supply voltage range 2.3 V to 2.7 V; 2.5 V I/O compatible with SSTL_2 signaling as documented in the device specification.
- Package & Temperature 60‑ball FBGA package (8 mm × 14 mm) in a commercial temperature rating of 0°C to +70°C.
Typical Applications
- Commercial embedded systems Compact DDR memory for systems and modules that require a 256 Mbit parallel DDR SDRAM within a 60‑FBGA footprint and 0°C to 70°C operation.
- Board‑level DRAM expansion Used as system DRAM where a parallel DDR x8 organization and programmable burst lengths are required for burst read/write operations.
- Memory subsystems for consumer devices Provides DDR performance (two data transfers per clock) and source‑synchronous data capture for designs targeting standard commercial environments.
Unique Advantages
- Double‑Data‑Rate throughput: Two data accesses per clock cycle via the internal DDR architecture for increased effective bandwidth at a given clock frequency.
- Source‑synchronous data capture: Bidirectional DQS and DLL alignment improve timing margin between DQ, DQS, and CK for reliable reads and writes.
- Compact FBGA package: 60‑ball FBGA (8 mm × 14 mm) enables dense board layouts while maintaining a parallel DDR interface.
- Flexible timing options: Programmable burst lengths (2/4/8) and standard DDR timing grades (speed grade -6 shown) support a range of memory access patterns.
- Commercial temperature rating: Specified operation from 0°C to +70°C for mainstream commercial applications.
- Standard SSTL_2 I/O compatibility: 2.5 V I/O signaling for integration with SSTL_2‑compatible memory controllers.
Why Choose IC DRAM 256MBIT PAR 60FBGA?
The MT46V32M8BG-6:GTR offers a compact, commercial‑temperature DDR SDRAM solution with 256 Mbit capacity and an x8 organization suited for board‑level memory in space‑constrained designs. Its DDR architecture, source‑synchronous DQS, and internal DLL provide timing mechanisms that support reliable high‑rate transfers at a 167 MHz clock (CL = 2.5) and a 2.3 V–2.7 V supply range.
This device is appropriate for designers who need a verified DDR SDRAM building block in a 60‑ball FBGA package, featuring programmable burst lengths, four internal banks, and standard refresh behavior for commercial applications.
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