MT46V32M8CY-5B:M TR
| Part Description |
IC DRAM 256MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 1,194 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT46V32M8CY-5B:M TR – IC DRAM 256MBIT PARALLEL 60FBGA
The MT46V32M8CY-5B:M TR is a 256 Mbit volatile memory device implemented as DDR SDRAM with a parallel memory interface. It provides a 32M × 8 memory organization and operates from a 2.5 V to 2.7 V supply.
Key electrical and timing attributes include a 200 MHz clock frequency, 700 ps access time, and a 15 ns write cycle time (word page). The device is supplied in a 60‑FBGA package (8 × 12.5 mm) and is specified for ambient operating temperatures from 0°C to 70°C (TA).
Key Features
- Memory Type & Architecture DDR SDRAM (volatile) with a 32M × 8 organization delivering 256 Mbit of storage.
- Interface & Timing Parallel DDR interface with a 200 MHz clock frequency, 700 ps access time, and a 15 ns write cycle time (word page).
- Power Operates from a 2.5 V to 2.7 V supply range.
- Package 60‑FBGA package (60‑TFBGA / supplier device package: 60‑FBGA 8 × 12.5 mm) for board-level mounting.
- Environmental Range Rated for ambient operating temperatures of 0°C – 70°C (TA).
- Memory Format DRAM organization supporting parallel memory systems.
Typical Applications
- Board-level memory expansion Provides 256 Mbit of parallel DDR SDRAM for designs requiring a compact FBGA memory device.
- External DRAM for controllers Suitable as external volatile memory where a 32M × 8, 200 MHz DDR interface is required.
- Legacy or parallel DDR memory systems Fits systems that utilize parallel DDR DRAM in a 60‑FBGA package footprint.
Unique Advantages
- Compact FBGA packaging: 60‑FBGA (8 × 12.5 mm) package reduces board area for memory implementations.
- DDR performance: 200 MHz clock frequency with 700 ps access time supports systems needing mid-range DDR timing.
- Standard voltage support: 2.5 V to 2.7 V supply range matches common DDR power domains.
- Explicit timing metrics: 15 ns write cycle time (word page) provides deterministic write timing for system design.
- Clear operating range: Specified 0°C – 70°C ambient temperature range for typical commercial applications.
Why Choose IC DRAM 256MBIT PARALLEL 60FBGA?
The MT46V32M8CY-5B:M TR delivers a straightforward, compact DDR SDRAM option with defined timing and power characteristics for designs that require 256 Mbit of parallel volatile memory. With a 32M × 8 organization, 200 MHz clocking, and a 60‑FBGA package, it is suited to board-level memory implementations where package density and known timing parameters are important.
Manufactured by Micron Technology Inc., this device targets designs that prioritize clear electrical and mechanical specifications—offering predictable behavior across its specified supply and temperature ranges for reliable integration into system memory architectures.
Request a quote or contact sales to discuss pricing, availability, and lead times for the MT46V32M8CY-5B:M TR.
