MT46V32M8FG-5B:G TR

The MT46V32M8FG-5B:G TR is a 256 Mbit DDR SDRAM organized as 32M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements an internal pipelined double-data-rate architecture with source-synchronous data capture and a differential clock input for high-speed memory operation.

This device targets systems that require compact, low-voltage DDR working memory at commercial temperature ranges, delivering up to a 200 MHz clock rate (timing grade -5B) and design features such as programmable burst lengths, auto-refresh capabilities and on-die DLL-based timing alignment.

Key Features

• Core / Architecture Double Data Rate (DDR) SDRAM with internal pipelined DDR architecture and four internal banks enabling two data accesses per clock cycle.
• Memory Organization & Capacity 32M × 8 configuration for a total memory size of 256 Mbit; supports programmable burst lengths of 2, 4 or 8.
• Performance & Timing Timing grade -5B supports up to 200 MHz clock rate (CL = 3); specified access time 700 ps and write cycle time (word/page) of 15 ns.
• Interface & Timing Alignments Parallel memory interface with differential clock inputs (CK/CK#), bidirectional data strobe (DQS) for source-synchronous capture, and an internal DLL to align DQ/DQS with CK.
• Power Operates from a 2.5 V to 2.7 V supply (VDD/VDDQ nominal +2.5 V ±0.2 V) with 2.5 V I/O levels (SSTL_2-compatible).
• Refresh & Reliability Supports auto-refresh and self-refresh modes with 8K refresh cycles; refresh timing options are provided in the device datasheet.
• Package & Temperature 60-ball FBGA package (8 mm × 14 mm) with commercial operating temperature 0°C to +70°C; supplier device package listed as 60-FBGA (8×14).

Typical Applications

• Parallel DDR memory subsystems Serves as external DDR working memory for systems implementing parallel DDR SDRAM interfaces.
• Embedded commercial designs Provides low-voltage DDR storage for commercial-temperature embedded systems requiring 256 Mbit density.
• Board-level memory expansion Compact 60-ball FBGA package enables board designs that require a small-footprint DDR memory solution.

Unique Advantages

• High data throughput: DDR architecture with two data transfers per clock cycle and support for a 200 MHz clock (timing grade -5B) improves sustained data bandwidth.
• Precise timing control: Differential clock inputs, bidirectional DQS and an internal DLL provide tight DQ/DQS alignment for reliable source-synchronous transfers.
• Standard low-voltage I/O: 2.5 V I/O (SSTL_2-compatible) and VDD/VDDQ supply range simplify integration with 2.5 V DDR interfaces.
• Compact package: 60-ball FBGA (8×14 mm) minimizes board area for dense memory implementations.
• Built-in refresh mechanisms: Auto-refresh and self-refresh support with 8K refresh cycles help maintain data integrity across operating conditions.

Why Choose IC DRAM 256MBIT PARALLEL 60FBGA?

The MT46V32M8FG-5B:G TR combines a 256 Mbit 32M×8 organization with DDR architecture, on-die DLL and source-synchronous DQS to deliver predictable timing and high-speed parallel memory operation for commercial-temperature designs. Its 2.5 V supply and SSTL_2-compatible I/O simplify integration into standard 2.5 V DDR memory subsystems.

This device is suited to designers needing a compact, board-level DDR memory component in a 60-ball FBGA package, offering programmable burst lengths, automatic refresh features and timing grades that support up to a 200 MHz clock for responsive memory performance.

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