MT46V32M8P-5B IT:M TR

The MT46V32M8P-5B IT:M TR is a 256 Mbit DDR SDRAM organized as 32M × 8, provided in a 66-TSSOP package. It offers a parallel memory interface with a 200 MHz clock frequency and timing characteristics suitable for systems that require synchronous DRAM storage with defined speed and timing parameters.

This device targets designs that need a discrete 256 Mbit DRAM component with specified access time, write-cycle timing and an extended operating temperature range from −40°C to 85°C.

Key Features

• Memory Architecture  DDR SDRAM technology organized as 32M × 8 for a total memory size of 256 Mbit; parallel memory interface for direct DRAM access.
• Performance  Specified clock frequency of 200 MHz and an access time of 700 ps to support synchronous data transfers; write cycle time (word/page) of 15 ns for page operations.
• Power  Operating voltage range of 2.5 V to 2.7 V, providing a defined supply window for system power design.
• Package  66-TSSOP (0.400", 10.16 mm width) package case; supplier device package listed as 66-TSOP for board-level integration.
• Temperature Range  Operating ambient temperature specified from −40°C to 85°C (TA), suitable for systems requiring extended temperature performance.
• Memory Format  Volatile DRAM storage suitable for applications where temporary, high-speed data storage is required.

Typical Applications

• Embedded systems  Provides 256 Mbit of parallel DDR SDRAM for microcontroller- or FPGA-based systems that require synchronous external memory.
• Networking and telecom equipment  Used where parallel DDR memory with defined timing (200 MHz clock, 700 ps access) is needed for buffering and packet handling.
• Industrial equipment  Applicable to control and instrumentation systems that need DRAM with an extended operating temperature range (−40°C to 85°C).
• Consumer electronics  Can be integrated into devices that require discrete DDR memory modules with a 66-TSSOP package footprint.

Unique Advantages

• Defined DDR performance: 200 MHz clock frequency and 700 ps access time deliver predictable synchronous memory behavior for timing-sensitive designs.
• Compact package footprint: 66-TSSOP (0.400", 10.16 mm width) package provides a standard form factor for board-level integration.
• Clear supply specification: 2.5 V to 2.7 V voltage range simplifies power rail planning and decoupling requirements.
• Extended temperature operation: Rated from −40°C to 85°C (TA) for applications that require operation across a wide ambient temperature range.
• Page write timing provided: 15 ns write cycle time (word/page) gives designers explicit timing for memory write operations.

Why Choose MT46V32M8P-5B IT:M TR?

The MT46V32M8P-5B IT:M TR combines a 256 Mbit DDR SDRAM architecture with explicit timing and voltage specifications, packaged in a 66-TSSOP footprint. Its defined clock, access and write timings make it suitable for designs that require deterministic parallel DRAM behavior and clear electrical parameters.

This device is appropriate for engineers and procurement teams specifying discrete DDR memory for embedded, networking, industrial or consumer designs where capacity, timing and operating temperature are primary selection criteria. The straightforward specifications support predictable integration and system-level planning.

Request a quote or submit an inquiry to obtain pricing and availability information for the MT46V32M8P-5B IT:M TR and to discuss volume, lead time, or technical clarification.