MT46V32M8P-5B:M TR

IC DRAM 256MBIT PARALLEL 66TSOP
Part Description

IC DRAM 256MBIT PARALLEL 66TSOP

Quantity 1,169 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0036

Overview of MT46V32M8P-5B:M TR – IC DRAM 256MBIT PARALLEL 66TSOP

The MT46V32M8P-5B:M TR is a 256 Mbit volatile DDR SDRAM device organized as 32M × 8 with a parallel memory interface. It delivers synchronous DDR SDRAM operation with a 200 MHz clock rate and is supplied in a 66‑TSSOP package for compact board-level integration.

This device is suited for designs that require parallel 256 Mbit volatile memory with defined timing characteristics and a commercial operating temperature range. Detailed electrical and timing specifications are provided in the manufacturer's datasheet.

Key Features

  • Memory Type & Architecture DDR SDRAM volatile memory organized as 32M × 8 for a total capacity of 256 Mbit.
  • Performance 200 MHz clock frequency with an access time of 700 ps and a write cycle time (word/page) of 15 ns to support synchronous DDR operation.
  • Voltage Operates from a 2.5 V to 2.7 V supply range.
  • Package 66‑TSSOP (0.400", 10.16 mm width) supplier device package for standard surface-mount assembly.
  • Interface Parallel memory interface for direct system memory integration.
  • Operating Temperature Commercial temperature range of 0 °C to 70 °C (TA).
  • Environmental RoHS status not specified in the provided product data.

Typical Applications

  • Parallel memory subsystems — Provides 256 Mbit DDR SDRAM in a 32M × 8 organization for systems that require parallel DRAM storage.
  • Board-level volatile storage — Used where synchronous DDR timing (200 MHz clock, 700 ps access) and a 2.5–2.7 V supply are required.
  • Compact SMT assemblies — 66‑TSSOP package enables compact placement in space-constrained PCB designs.

Unique Advantages

  • 256 Mbit density: Provides substantial memory capacity in a single 32M × 8 device, reducing the need for multiple lower-density components.
  • DDR SDRAM performance: Synchronous DDR architecture with a 200 MHz clock and 700 ps access time for predictable timing in synchronous systems.
  • Defined timing for write cycles: 15 ns write cycle time (word/page) supports system timing design and memory controller integration.
  • Standard 66‑TSSOP packaging: Industry-standard surface-mount package simplifies assembly and mechanical design.
  • Commercial temperature range: Rated for 0 °C to 70 °C, matching typical commercial electronics operating conditions.
  • Wide supply tolerance: 2.5 V to 2.7 V operating range supports systems designed around standard DDR supply rails.

Why Choose IC DRAM 256MBIT PARALLEL 66TSOP?

The MT46V32M8P-5B:M TR positions itself as a straightforward 256 Mbit DDR SDRAM solution for designs that need parallel volatile memory with defined timing and supply requirements. Its 32M × 8 organization, 200 MHz clock capability, and 66‑TSSOP package make it suitable for compact systems where predictable DDR performance and standard mounting are priorities.

Engineers specifying this device benefit from clear electrical and timing parameters and a commercial operating range, making it appropriate for a range of board-level memory implementations. A detailed manufacturer datasheet is available for integration and validation in target designs.

Request a quote or contact sales to discuss pricing, lead times, and availability for the MT46V32M8P-5B:M TR.

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