MT46V32M8P-5B L:M

The MT46V32M8P-5B L:M is a 256 Mbit DDR SDRAM organized as 32M × 8 with a parallel memory interface in a 66‑TSSOP package. It operates with a clock frequency of 200 MHz and an access time of 700 ps.

Designed for board‑level memory applications requiring a compact 66‑TSSOP footprint, this device supports a 2.5 V to 2.7 V supply range and a commercial operating temperature of 0°C to 70°C (TA).

Key Features

• Memory Core 256 Mbit DRAM organized as 32M × 8 providing parallel DDR SDRAM architecture for standard memory storage.
• Performance / Timing 200 MHz clock frequency with 700 ps access time and a 15 ns write cycle time (word/page) to define operational timing.
• Power Operates from a 2.5 V to 2.7 V supply, suitable for systems designed around DDR core supply requirements provided in the data.
• Package 66‑TSSOP (0.400", 10.16 mm width) supplier device package for compact board placement and standard surface-mount assembly.
• Interface Parallel memory interface consistent with DDR SDRAM signaling and board-level memory integration.
• Operating Range Commercial temperature rating of 0°C to 70°C (TA) for typical ambient operating environments.

Typical Applications

• Commercial embedded systems — Provides 256 Mbit DDR parallel memory for board designs that require a compact surface-mount DRAM solution within 0°C to 70°C environments.
• Legacy parallel‑DDR designs — Fits designs that use parallel DDR SDRAM organized as 32M × 8 and require a 66‑TSSOP package footprint.
• Board‑level memory expansion — Used to add or replace DRAM capacity on control and processing boards where a 2.5 V–2.7 V supply and defined timing (200 MHz clock, 15 ns write cycle) are required.

Unique Advantages

• High-density 256 Mbit capacity: Offers substantial on‑board DRAM capacity in a single 32M × 8 device to simplify memory budgeting.
• Defined timing characteristics: 200 MHz clock frequency, 700 ps access time and 15 ns write cycle time provide clear performance parameters for system timing design.
• <strong compact 66‑TSSOP package: Enables space-constrained layouts with a standard 0.400" (10.16 mm) wide TSSOP footprint.
• Standard DDR supply range: 2.5 V to 2.7 V operation aligns with common DDR power domains used in parallel DRAM designs.
• Commercial temperature rating: Specified for 0°C to 70°C operation, suitable for typical commercial electronic products.

Why Choose IC DRAM 256MBIT PARALLEL 66TSOP?

IC DRAM 256MBIT PARALLEL 66TSOP delivers a straightforward, board‑level DDR memory option with clear electrical and timing specifications. Its 256 Mbit density, 32M × 8 organization and parallel interface make it suitable for designs that need defined DDR timing and a compact 66‑TSSOP package.

The combination of 200 MHz clock operation, 2.5 V–2.7 V supply compatibility and commercial temperature rating supports integration into a variety of commercial embedded systems and board‑level memory expansions where these exact specifications are required.

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