MT46V32M8FG-6:G TR

The MT46V32M8FG-6:G TR is a 256 Mbit volatile DDR SDRAM organized as 32M × 8 with a parallel memory interface. It implements an internal, pipelined double-data-rate architecture with source-synchronous data capture and supports a 167 MHz clock frequency (speed grade -6).

Designed for systems that require compact, high-throughput DRAM in a 60-ball FBGA (8 × 14 mm) package, this device provides standard DDR features such as DQS, DLL, programmable burst lengths and auto-refresh while operating from a 2.3 V to 2.7 V supply and a commercial temperature range of 0 °C to 70 °C.

Key Features

• Core DDR Architecture  Internal pipelined double-data-rate operation delivers two data accesses per clock cycle with a DLL to align DQ/DQS transitions.
• Memory Organization  256 Mbit density organized as 32M × 8 with four internal banks for concurrent operation.
• Performance / Timing  Speed grade -6 supports a 167 MHz clock (CL = 2.5) with an access time of 700 ps and a typical write cycle time (word page) of 15 ns.
• Data I/O and Timing Features  Bidirectional data strobe (DQS) transmitted/received with data, DQS edge-aligned for READs and center-aligned for WRITEs, and programmable burst lengths of 2, 4, or 8.
• Clock and Command Interface  Differential clock inputs (CK and CK#) with commands entered on positive CK edges for reliable timing control.
• Refresh and Reliability  Auto refresh with 64 ms / 8192-cycle refresh for commercial devices and support for self-refresh as specified in the product datasheet.
• Power  Operates from a 2.3 V to 2.7 V supply range (VDD/VDDQ nominally 2.5 V ± tolerance per datasheet).
• Package and Temperature  60-ball FBGA package (8 mm × 14 mm) and commercial operating temperature range of 0 °C to 70 °C.

Typical Applications

• System Memory Designs  For systems requiring a 256 Mbit DDR SDRAM with a parallel interface and compact 60‑FBGA footprint.
• Embedded Modules  Suitable where a 32M × 8 DDR memory device with 4 internal banks and programmable burst lengths is required.
• High‑Throughput Buffers  Can be used as a parallel DDR buffer memory in designs leveraging source‑synchronous DQS timing and differential clock inputs.

Unique Advantages

• Compact FBGA Packaging: 60-ball FBGA (8 × 14 mm) minimizes board area while providing a standardized ball-out for integration.
• DDR Performance at 167 MHz: Speed grade -6 operation delivers double-data-rate throughput with low access latency (700 ps).
• Robust DDR Feature Set: DQS, DLL, differential clocks and programmable burst lengths enable reliable, source-synchronous data transfers and flexible burst modes.
• Standard Supply Range: 2.3 V to 2.7 V operation aligns with common 2.5 V DDR supply rails for straightforward power design.
• Commercial Temperature Rating: Specified for 0 °C to 70 °C operation for typical commercial applications and environments.
• Integrated Refresh Management: Auto-refresh support (64 ms / 8192 cycles for commercial devices) simplifies system refresh requirements.

Why Choose IC DRAM 256MBIT PAR 60FBGA?

The MT46V32M8FG-6:G TR delivers a compact, standards-based DDR SDRAM solution with a clear specification set—256 Mbit density, 32M × 8 organization, 167 MHz operation, and a 60‑ball FBGA package—suitable for designs that need a defined commercial temperature rating and conventional 2.5 V DDR supply. Its built-in DDR timing features (DQS, DLL, differential clocks) and programmable burst lengths provide deterministic timing and flexible data transfer modes.

This device is appropriate for engineers and procurement teams specifying parallel DDR memory where compact packaging, established DDR functionality, and predictable electrical/timing characteristics are required. The clear datasheet-backed specifications support straightforward integration, validation and BOM planning.

Request a quote or submit a product inquiry to obtain pricing, lead-time and availability details for the MT46V32M8FG-6:G TR.