MT46V32M8FG-6 IT:G TR

The MT46V32M8FG-6 IT:G TR is a 256 Mbit DDR SDRAM device delivered in a 60-ball FBGA (8 mm × 14 mm) package. It implements a double-data-rate, internal pipelined architecture with four internal banks and a 32M × 8 memory organization for parallel DRAM applications.

This device targets systems that require a compact, parallel DDR memory solution with 167 MHz clock capability, source-synchronous DQS capture, and industry-standard 2.5 V I/O signaling.

Key Features

• Core DDR Architecture Internal pipelined double-data-rate (DDR) design enabling two data accesses per clock cycle; differential clock inputs (CK/CK#) and a DLL to align DQ/DQS with CK.
• Memory Organization 256 Mbit total capacity organized as 32M × 8 with four internal banks for concurrent operation.
• Performance & Timing Rated for a 167 MHz clock frequency (speed grade -6); typical access window and timing characteristics support synchronous, burst-oriented operation with programmable burst lengths of 2, 4, or 8.
• Data Interface Parallel memory interface with bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; data mask (DM) supported for write masking.
• Supply & I/O Core/I/O supply nominally 2.5 V (VDD/VDDQ = 2.5 V ±0.2 V), operational range 2.3 V to 2.7 V; I/O compatible with SSTL_2 signaling.
• Refresh & Power Management Supports auto refresh (8K refresh cycles) and self refresh (note: self refresh options vary by device revision and marking).
• Package 60-ball FBGA package, 8 mm × 14 mm (60-FBGA, supplier package 60-FBGA (8×14)), suitable for compact board layouts.
• Temperature Range Industrial temperature rating: −40 °C to +85 °C (TA), suitable for systems requiring extended ambient operation.
• Measured Timing Access time example provided: 700 ps; write cycle time (word page) specified at 15 ns.

Typical Applications

• Embedded system memory — Provides 256 Mbit of parallel DDR SDRAM for designs requiring compact, board-mounted main or buffer memory.
• Consumer electronics — Compact FBGA footprint and source-synchronous DQS support burst-oriented data transfers in space-constrained devices.
• Industrial equipment — Industrial temperature rating (−40 °C to +85 °C) supports deployment in extended‑temperature environments.

Unique Advantages

• Double-data-rate throughput: Two data transfers per clock cycle increase effective bandwidth without increasing core clock frequency.
• Source-synchronous DQS capture: Bidirectional DQS transmitted/received with data and a DLL alignment mechanism improve timing margin for reads and writes.
• Flexible burst operation: Programmable burst lengths (2, 4, 8) enable tunable transfer sizes to match system access patterns.
• Industrial temperature rating: Specified operation from −40 °C to +85 °C supports designs that require extended ambient range.
• Compact FBGA package: 60-ball FBGA (8×14 mm) offers a small footprint for dense board designs while providing the full DDR feature set.
• SSTL_2-compatible I/O: 2.5 V I/O signaling aligns with common DDR interface standards for system integration.

Why Choose MT46V32M8FG-6 IT:G TR?

The MT46V32M8FG-6 IT:G TR combines a 256 Mbit DDR SDRAM organization with a compact 60-ball FBGA package and industrial temperature rating, providing a balance of density, timing performance, and board-level integration. Its DDR architecture, DQS source-synchronous capture, and DLL alignment make it suitable for designs that need predictable, burst-oriented parallel memory.

This device is appropriate for engineers specifying parallel DDR memory where a 32M × 8 organization, 2.5 V I/O compatibility, and extended temperature operation are required. The documented timing parameters and refresh behavior support integration into systems relying on standard DDR command and timing sequences.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT46V32M8FG-6 IT:G TR.