MT46V32M8P-5B IT:M

IC DRAM 256MBIT PARALLEL 66TSOP
Part Description

IC DRAM 256MBIT PARALLEL 66TSOP

Quantity 1,241 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeIndustrial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of MT46V32M8P-5B IT:M – IC DRAM 256Mbit Parallel 66TSOP

The MT46V32M8P-5B IT:M is a 256 Mbit volatile DRAM device implemented in DDR SDRAM technology with a 32M × 8 memory organization and a parallel interface. It is supplied in a 66-TSSOP (0.400", 10.16 mm width) package.

Engineered for systems requiring a 200 MHz clock and fast access, the device specifies a 700 ps access time, operates from a 2.5 V to 2.7 V supply range, and supports an ambient temperature range of -40°C to 85°C.

Key Features

  • Core & Memory 256 Mbit DRAM organized as 32M × 8, supporting standard parallel DRAM memory architectures.
  • Technology DDR SDRAM technology for double data rate operation at the specified clock frequency.
  • Performance 200 MHz clock frequency with a 700 ps access time and a 15 ns write cycle time (word/page) for timing-defined memory access.
  • Power Operating voltage range of 2.5 V to 2.7 V.
  • Package & Mounting 66-TSSOP (0.400", 10.16 mm width) supplier device package, surface-mount mounting type.
  • Temperature Range Rated for operation from -40°C to 85°C (TA).
  • Interface & Format Parallel memory interface in DRAM format suitable for parallel bus integrations.

Unique Advantages

  • Fast access and clocking: 700 ps access time combined with a 200 MHz clock frequency provides defined timing for memory operations.
  • Compact TSOP package: 66-TSSOP (0.400", 10.16 mm) package offers a standard surface-mount footprint for board-level integration.
  • Wide operating voltage: 2.5 V to 2.7 V support aligns with common DDR supply rails for system compatibility.
  • Defined timing for write cycles: 15 ns write cycle time (word/page) gives clear handoff for memory write operations.
  • Extended ambient temperature: -40°C to 85°C rating supports use across a range of environmental conditions.
  • Parallel 32M × 8 organization: Memory density and organization provide a deterministic interface for parallel memory buses.

Why Choose MT46V32M8P-5B IT:M?

The MT46V32M8P-5B IT:M delivers a compact, specification-driven 256 Mbit DDR SDRAM solution for designs that require a parallel memory interface, defined timing, and operation across a broad temperature and voltage range. Its 32M × 8 organization, 200 MHz clock rating, and 66-TSSOP package make it suitable for systems where predictable memory timing and a standard surface-mount package are important.

This device fits designs that need a straightforward DRAM building block with explicit electrical and timing parameters, offering clear integration points for system designers and procurement teams focused on component-level specification matching.

To request pricing, availability, or a formal quote for the MT46V32M8P-5B IT:M, please submit an inquiry or request a quote through your preferred procurement channel.

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