MT46V32M8CY-5B:M

The MT46V32M8CY-5B:M is a 256 Mbit DDR SDRAM device from Micron Technology Inc., organized as 32M × 8 with a parallel memory interface. It is supplied in a 60-FBGA package and is specified for operation at a 200 MHz clock frequency with supply voltage between 2.5 V and 2.7 V.

This DRAM device targets designs that require a volatile 256 Mbit DDR memory element with defined timing characteristics—700 ps access time and a 15 ns write cycle time (word page)—within an industrial-style 0 °C to 70 °C ambient range.

Key Features

• Memory Core 256 Mbit DDR SDRAM organized as 32M × 8, providing parallel byte-wide memory access for systems requiring this density.
• Performance & Timing Clock frequency rated at 200 MHz with an access time of 700 ps and a write cycle time (word page) of 15 ns, enabling deterministic timing characteristics.
• Interface Parallel memory interface suited to designs that integrate DDR SDRAM modules with parallel signaling.
• Power Operates from a 2.5 V to 2.7 V supply range, specifying the device's required operating voltage window.
• Package & Mounting Available in a 60-TFBGA / 60-FBGA (8 × 12.5) package, offering a compact BGA footprint for board-level integration.
• Operating Range Specified for ambient operation from 0 °C to 70 °C (TA), matching commercial-temperature system requirements.

Typical Applications

• Embedded systems Acts as on-board volatile memory where a 256 Mbit DDR SDRAM with parallel interface and defined timing is required.
• Memory expansion Adds 256 Mbit parallel DDR capacity to systems that accept byte-wide DRAM modules in a compact BGA package.
• Consumer and industrial electronics Provides DDR memory capacity for devices operating within the 0 °C to 70 °C ambient range and using 2.5–2.7 V supplies.

Unique Advantages

• Compact BGA packaging: The 60-FBGA (8 × 12.5) package enables space-efficient board layouts while supporting BGA assembly processes.
• Defined timing metrics: 200 MHz clock rate, 700 ps access time, and 15 ns write cycle time deliver predictable performance for timing-sensitive designs.
• Standard DDR parallel interface: Parallel interface and 32M × 8 organization simplify integration into systems designed for byte-wide DDR memory.
• Fixed supply range: 2.5 V to 2.7 V supply specification helps align power-rail design and validation with device requirements.
• Commercial temperature support: Rated for 0 °C to 70 °C ambient operation for deployment in commercial-temperature environments.
• Micron manufacturing: Produced by Micron Technology Inc., providing traceability to a major memory supplier.

Why Choose MT46V32M8CY-5B:M?

The MT46V32M8CY-5B:M positions itself as a straightforward 256 Mbit DDR SDRAM option for designs that require a parallel DDR memory element with defined timing, a compact 60-FBGA footprint, and a commercial operating temperature range. Its combination of 32M × 8 organization, 200 MHz clock specification, and explicit supply-voltage window supports predictable integration into board-level memory subsystems.

This device is suited to engineers and procurement teams specifying volatile DDR memory for embedded and electronic applications that need verifiable timing and power characteristics, compact packaging, and manufacturer traceability.

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