MT46V32M8BG-5B:GTR

The MT46V32M8BG-5B:GTR is a 256 Mbit volatile DDR SDRAM organized as 32M × 8 with a parallel memory interface. It implements a pipelined double-data-rate architecture with source-synchronous data capture and internal DLL to align signals, enabling two data transfers per clock cycle.

Designed for systems that require compact, board-mounted DDR memory, this device delivers 256 Mbit capacity in a 60-ball FBGA (8 × 14 mm) package and operates over a commercial temperature range of 0°C to 70°C.

Key Features

• Core / Architecture  Internal pipelined DDR architecture with two data accesses per clock cycle and DLL alignment.
• Memory Organization & Capacity  256 Mbit total capacity arranged as 32M × 8 with four internal banks for concurrent operation.
• Performance / Timing  Rated for 200 MHz clock frequency (–5B timing) with an access time of 700 ps and write cycle time (word/page) of 15 ns.
• Data Interface  Parallel DDR interface with bidirectional data strobe (DQS), data mask (DM), and differential clock inputs (CK/CK#) for source-synchronous capture.
• Signal and Burst Control  Programmable burst lengths of 2, 4, or 8 and support for concurrent auto precharge options.
• Power  Supply voltage range specified at 2.5 V to 2.7 V (VDD/VDDQ options noted in datasheet).
• Refresh and Sleep  Supports auto refresh and self refresh (self refresh option noted in datasheet options).
• Package & Mounting  60-ball FBGA package (8 mm × 14 mm) for board-level mounting; supplier device package listed as 60-FBGA (8×14).
• Operating Temperature  Commercial temperature rating: 0°C to +70°C (TA).

Typical Applications

• Parallel DDR memory subsystems  Use as on-board DDR SDRAM where a 256 Mbit, 32M × 8 parallel memory device is required.
• Embedded systems with source-synchronous capture  Systems leveraging DQS and differential CK/CK# timing for reliable high-speed data transfers.
• Compact board-level memory  Designs needing a small 60-ball FBGA footprint for space-constrained PCBs.

Unique Advantages

• DDR two-transfers-per-cycle architecture: Enables higher effective data throughput by performing two data accesses per clock cycle.
• Source-synchronous data capture (DQS): Bidirectional DQS paired with DLL alignment improves timing margin between DQ and clock edges.
• Programmable burst lengths: Burst lengths of 2, 4, or 8 give flexibility for different access patterns and system requirements.
• Compact FBGA package: 60-ball FBGA (8×14 mm) provides a compact mounting option for board-level memory integration.
• Commercial temperature rating: Specified operation from 0°C to +70°C for typical commercial applications.
• Standard 2.5 V I/O: Operates within a 2.5 V to 2.7 V supply range consistent with SSTL_2-compatible signalling noted in the datasheet.

Why Choose IC DRAM 256MBIT PARALLEL 60FBGA?

The MT46V32M8BG-5B:GTR positions itself as a straightforward 256 Mbit DDR SDRAM solution for designs that require a compact, parallel-interface memory device with source-synchronous data capture and programmable burst control. Its 32M × 8 organization, four internal banks, and DDR architecture provide the necessary building blocks for systems needing predictable DDR timing and board-level integration.

This device is suited to engineers specifying commercial-temperature DDR memory with a 60-ball FBGA package and 2.5 V-class I/O. The documented timing options, refresh modes, and package details give clear, verifiable integration parameters for system design and BOM planning.

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