MT46V32M8P-6T IT:G TR

The MT46V32M8P-6T IT:G TR is a 256 Mbit DDR SDRAM organized as 32M × 8 with a parallel memory interface in a 66-pin TSSOP package. It implements a double-data-rate architecture with source-synchronous DQS, differential clock inputs and an internal DLL to support two data transfers per clock cycle.

Designed for temperature-critical installations, this device supports an industrial ambient range of -40°C to +85°C and operates from a 2.3 V to 2.7 V supply. Typical use cases include industrial and embedded systems requiring compact, parallel DDR memory for buffering and runtime data storage.

Key Features

• Core Architecture  Internal pipelined DDR architecture with four internal banks and DLL for DQ/DQS alignment; supports two data accesses per clock cycle.
• Memory Organization  256 Mbit capacity organized as 32M × 8 with programmable burst lengths of 2, 4, or 8 and data mask (DM) support for masked writes.
• Performance  Timing grade -6T targeting 167 MHz clock operation (DDR transfers), with an access window specification and a 700 ps access time.
• Interface  Parallel DDR interface with bidirectional data strobe (DQS), differential clock inputs (CK/CK#) and SSTL_2-compatible 2.5 V I/O.
• Power  VDD / VDDQ operating range between 2.3 V and 2.7 V to match standard DDR I/O voltage domains.
• Timing & Refresh  Supports auto refresh (8K refresh cycles), self-refresh options (per device options) and a write cycle time (word page) of 15 ns.
• Package  66-pin TSSOP (0.400", 10.16 mm width) plastic package for compact board-level integration and improved reliability lead form (OCPL option noted).
• Temperature Range  Industrial temperature rating: -40°C to +85°C (TA) for use in temperature-demanding environments.

Typical Applications

• Industrial Embedded Systems  Provides DDR parallel memory for embedded controllers and industrial modules operating across -40°C to +85°C.
• Data Buffering  Suitable for high-rate data buffering where a parallel DDR interface and programmable burst lengths improve throughput.
• Memory Expansion for Compact Boards  66-TSSOP package enables higher density memory integration on space-constrained PCBs.

Unique Advantages

• DDR Source-Synchronous Interface: Bidirectional DQS with DLL alignment supports reliable data capture using the device's differential clock inputs.
• Industrial Temperature Rating: -40°C to +85°C operation enables deployment in temperature-challenging embedded and industrial applications.
• Flexible Timing Options: -6T timing grade supports 167 MHz clock operation and defined data-out/access windows for deterministic timing design.
• Compact Package: 66-pin TSSOP (10.16 mm width) reduces board area while providing a lead-form option that improves manufacturing reliability.
• Standard DDR Signaling: 2.5 V I/O (SSTL_2-compatible) and standard DDR command timing simplify integration with existing DDR-supporting controllers.

Why Choose IC DRAM 256MBIT PAR 66TSOP?

The IC DRAM 256MBIT PAR 66TSOP delivers a compact, industrial-temperature DDR memory solution with a parallel interface, predictable timing, and industry-standard signaling. Its 32M × 8 organization, 66-TSSOP package, and -40°C to +85°C operating range make it appropriate for embedded and industrial designs that require on-board DDR capacity in a small form factor.

This device is suited for engineers seeking deterministic DDR behavior with programmable burst lengths and built-in refresh support, providing a robust memory option for buffering and runtime storage in temperature-sensitive systems.

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