MT46V32M8TG-5B:G TR

The MT46V32M8TG-5B:G TR is a 256 Mbit DDR SDRAM device organized as 32M × 8 with a parallel memory interface in a 66-pin TSSOP package. It implements a double-data-rate architecture with internal pipelining and supports source-synchronous data capture for high-throughput memory transfers.

This device is intended for commercial-temperature (0°C to 70°C) systems that require a 2.5 V I/O DDR memory solution in a compact 66-TSSOP footprint, offering 200 MHz clock operation with two data transfers per clock cycle.

Key Features

• Core / Architecture 
  Double Data Rate (DDR) SDRAM with internal pipelined DDR architecture performing two data accesses per clock cycle and an internal DLL to align DQ/DQS with CK.
• Memory Organization & Size 
  256 Mbit capacity, organized as 32M × 8 with four internal banks for concurrent operation.
• Timing & Performance 
  Supports 200 MHz clock frequency (DDR operation) with an access time of 700 ps and write cycle time (word page) of 15 ns; -5B timing grade shown for 5 ns cycle at CL = 3.
• Data I/O and Strobe 
  Bidirectional data strobe (DQS) transmitted/received with data for source-synchronous capture; DQS edge-aligned for READs and center-aligned for WRITEs.
• Clock & Command 
  Differential clock inputs (CK and CK#) with commands entered on positive CK edges.
• Power 
  VDD/VDDQ supply range +2.5 V ±0.2 V (documented option also lists +2.6 V ±0.1 V for DDR400); 2.5 V I/O compatible with SSTL_2 signaling.
• Programmable Features 
  Programmable burst lengths (2, 4, or 8), data mask (DM) for write masking, auto refresh and concurrent auto precharge options supported.
• Package & Temperature 
  66‑pin TSSOP (0.400", 10.16 mm width) package; commercial operating temperature 0°C to +70°C.

Typical Applications

• Commercial embedded systems 
  Provides 256 Mbit DDR SDRAM in a compact 66-TSSOP package for board-level memory expansion in commercial-temperature electronic products.
• Board-level memory subsystems 
  Parallel DDR interface and 32M × 8 organization suit designs that require straightforward memory mapping and source-synchronous data capture.
• Legacy or space-constrained designs 
  66‑TSSOP package and standard 2.5 V I/O make this device suitable for systems retaining parallel DDR memory interfaces and tight PCB layouts.

Unique Advantages

• DDR source-synchronous capture 
  Bidirectional DQS and DLL alignment enable reliable DDR read/write timing and source-synchronous data transfers.
• 200 MHz DDR operation 
  Supports 200 MHz clocking for doubled data throughput per clock cycle (DDR mode) as specified for the -5B timing grade.
• SSTL_2-compatible I/O 
  2.5 V I/O levels provide compatibility with SSTL_2 signaling standards noted in the datasheet.
• Flexible burst and refresh control 
  Programmable burst lengths, auto refresh, and concurrent auto precharge options allow tuning for varied access patterns and system refresh requirements.
• Compact, reliable package 
  Longer‑lead 66‑TSSOP (OCPL) option is documented for improved reliability in board-level assemblies.

Why Choose IC DRAM 256MBIT PARALLEL 66TSOP?

The MT46V32M8TG-5B:G TR offers a 256 Mbit DDR SDRAM solution with documented 200 MHz operation, source-synchronous DQS handling, and 2.5 V SSTL_2-compatible I/O in a 66‑pin TSSOP package. Its four-bank DDR architecture, programmable burst lengths, and on-die DLL make it suitable for commercial designs that require deterministic parallel DDR memory behavior and compact package integration.

This device is appropriate for engineers specifying commercial-temperature board-level DDR memory where a 32M × 8 organization, 2.5 V supply, and a 66‑TSSOP footprint are required; the documented timing grade (-5B) and timing parameters support designs targeting DDR transfer rates at the stated clock frequency.

If you would like a quote or need pricing and availability details for MT46V32M8TG-5B:G TR, please request a quote or submit a purchase inquiry and include your required quantity and delivery timeline.