MT46V32M8TG-6T:G TR

The MT46V32M8TG-6T:G TR is a 256 Mbit volatile DRAM organized as 32M × 8, implemented as DDR (double-data-rate) SDRAM with a parallel memory interface. It provides pipelined DDR architecture with source‑synchronous data capture and four internal banks for concurrent operation.

Designed for commercial-temperature applications, the device supports operation at a clock frequency of 167 MHz, a supply range of 2.3 V to 2.7 V, and is supplied in a 66‑TSSOP (0.400", 10.16 mm width) package.

Key Features

• Core Architecture Internal pipelined DDR architecture enabling two data accesses per clock cycle and four internal banks for concurrent operation.
• Memory Organization 32M × 8 configuration delivering 256 Mbit of volatile DRAM in a parallel interface format.
• Data I/O and Timing Bidirectional data strobe (DQS) transmitted/received with data, DLL alignment of DQ/DQS with CK, programmable burst lengths (2, 4, 8), and an access time of 700 ps.
• Clocking Differential clock inputs (CK and CK#) with commands entered on each positive CK edge; typical supported clock frequency listed as 167 MHz for this speed grade.
• Voltage and I/O Standards Supply voltage 2.3 V to 2.7 V with 2.5 V I/O (SSTL_2-compatible) noted in the datasheet.
• Timing Options -6T speed grade timing (TSOP) supporting a 6 ns cycle time at CL = 2.5 (DDR333) and operation at 167 MHz as specified for this variant.
• Refresh and Power Modes Auto refresh and self‑refresh options with an 8192-cycle refresh count for commercial temperature devices.
• Package 66‑pin TSOP (66‑TSSOP) plastic package (0.400" / 10.16 mm width) for surface mounting.

Typical Applications

• System Memory High-speed DDR SDRAM for designs that require 256 Mbit parallel memory with 32M × 8 organization and multi-bank concurrency.
• Buffering and Data Capture Use where source‑synchronous DQS and sub-nanosecond access timing (700 ps) support fast read/write buffering and data capture.
• Embedded Memory Subsystems Suitable for commercial-temperature embedded designs requiring 2.3–2.7 V operation and a compact 66‑TSSOP package.

Unique Advantages

• Double-Data-Rate Throughput: Two data transfers per clock cycle with DDR architecture increase effective bandwidth without changing clock frequency.
• Source-Synchronous Data Capture: Bidirectional DQS and DLL alignment improve data integrity for high-speed reads and writes.
• Flexible Timing and Burst Control: Programmable burst lengths (2/4/8) and multiple timing options (-6T speed grade) allow tuning for target system performance.
• Compact, Industry-Standard Package: 66‑TSSOP package offers a compact footprint (0.400", 10.16 mm width) for space-constrained board layouts.
• Commercial Temperature Coverage: Rated for 0°C to 70°C operation to match common commercial embedded system environments.

Why Choose IC DRAM 256MBIT PAR 66TSOP?

The MT46V32M8TG-6T:G TR provides a compact 256 Mbit DDR SDRAM solution with a 32M × 8 organization, source‑synchronous DQS, DLL alignment, and multi-bank architecture that together deliver predictable, high-throughput memory performance for commercial designs. Its supported clocking and timing options (including the -6T TSOP timing grade) offer flexibility to match system timing requirements.

Manufactured by Micron Technology Inc., this 66‑TSSOP packaged device is suited to embedded memory subsystems and buffering applications where a 2.3–2.7 V supply, 0°C–70°C operating range, and parallel DDR interface are required.

Request a quote or submit an inquiry for MT46V32M8TG-6T:G TR to obtain pricing and availability information for your next design.