MT46V32M8TG-75:G

The MT46V32M8TG-75:G is a 256 Mbit DDR SDRAM organized as 32M × 8 with a parallel memory interface in a 66‑pin TSSOP (10.16 mm width) package. It implements an internal, pipelined double-data-rate architecture with four internal banks and source-synchronous data capture to deliver two data accesses per clock cycle.

Targeted for designs that require a 256 Mbit parallel DDR memory device in a compact TSOP form factor, this part provides standardized DDR features and timing tuned for a 133 MHz clock rate and commercial temperature operation (0°C to +70°C).

Key Features

• Core DDR Architecture Internal pipelined double-data-rate (DDR) design supporting two data transfers per clock cycle and four internal banks for concurrent operation.
• Memory Organization & Capacity 256 Mbit total capacity organized as 32M × 8 with parallel memory interface.
• Timing & Performance Specified for a 133 MHz clock frequency with an access time of 750 ps and a write cycle time (word page) of 15 ns.
• Data Strobe and Clocking Bidirectional data strobe (DQS) transmitted/received with data for source‑synchronous capture, plus differential clock inputs (CK and CK#) and a DLL to align DQ/DQS with CK.
• Programmable Burst and Refresh Programmable burst lengths of 2, 4, or 8 and support for auto refresh and self refresh modes as documented in the device specification.
• Voltage and I/O Device supply range 2.3 V to 2.7 V; 2.5 V I/O compatible (SSTL_2‑compatible behavior noted in the device specification).
• Package & Thermal 66‑pin TSSOP (0.400", 10.16 mm width) plastic package with longer‑lead TSOP option for improved reliability; rated for commercial ambient temperature 0°C to +70°C.

Unique Advantages

• DDR double‑data‑rate throughput: Enables two data transfers per clock cycle due to the internal DDR architecture, increasing effective bandwidth at a given clock frequency.
• Source‑synchronous DQS with DLL: DQS alignment and an internal DLL improve timing margins for read and write operations by aligning data and strobe edges with the clock.
• SSTL_2‑compatible I/O at standard DDR supply: 2.5 V I/O and 2.3–2.7 V supply range allow integration with common DDR signaling environments.
• Compact, robust TSOP package: 66‑TSSOP package (10.16 mm width) provides a space-efficient footprint with a longer‑lead TSOP option for improved reliability.
• Flexible burst and refresh options: Programmable burst lengths and support for auto/self refresh modes simplify memory command sequencing and power management.

Why Choose IC DRAM 256MBIT PARALLEL 66TSOP?

IC DRAM 256MBIT PARALLEL 66TSOP (MT46V32M8TG-75:G) combines a 256 Mbit DDR SDRAM organization with source‑synchronous data capture, DLL alignment, and a commercial temperature rating to provide a reliable parallel DDR memory option in a compact 66‑TSSOP package. Its timing characteristics (133 MHz clock, 750 ps access) and programmable burst lengths make it suitable for designs that require standard DDR timing behavior in a TSOP form factor.

This device is appropriate for engineers specifying a 32M × 8 DDR memory with SSTL_2‑compatible I/O and standard DDR control features, offering a clear specification set for system integration and validation.

If you would like pricing, availability, or a formal quote for MT46V32M8TG-75:G, request a quote or submit a sales inquiry with your requirements and projected quantities.