MT46V64M8BN-5B:D TR

The MT46V64M8BN-5B:D TR is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface. It delivers synchronous double-data-rate operation at a 200 MHz clock frequency with an access time of 700 ps and a word-page write cycle time of 15 ns.

This device is provided in a 60-FBGA package (10 × 12.5 mm) and operates from a 2.5 V to 2.7 V supply across an ambient temperature range of 0 °C to 70 °C (TA), suitable for designs that require on-board parallel DDR memory in compact BGA form factors.

Key Features

• Core Memory Type  DDR SDRAM architecture providing synchronous double-data-rate operation for parallel memory access.
• Capacity & Organization  512 Mbit capacity, organized as 64M × 8, enabling byte-oriented parallel memory configurations.
• Performance  200 MHz clock frequency and 700 ps access time deliver deterministic timing; word-page write cycle time is 15 ns.
• Power  Operates from a 2.5 V to 2.7 V supply range to match systems designed around standard DDR I/O voltages.
• Package & Form Factor  60-FBGA package (supplier package: 60-FBGA, 10 × 12.5 mm) for high-density board mounting in compact designs.
• Environmental Range  Specified operating ambient temperature range of 0 °C to 70 °C (TA).

Typical Applications

• Parallel DDR memory subsystems  Provides 512 Mbit DDR storage for designs requiring a parallel SDRAM interface and byte-wide organization.
• On-board buffering and working memory  Used for temporary data storage where a 64M × 8 memory organization and 200 MHz operation meet system timing needs.
• Compact BGA module designs  Suited for compact PCBs that require a 60-FBGA footprint for dense memory placement.

Unique Advantages

• Matched DDR timing  200 MHz clock and 700 ps access time provide predictable DDR performance for synchronous memory designs.
• Flexible voltage range  2.5 V to 2.7 V supply compatibility eases integration into systems using standard DDR operating voltages.
• Byte-wide organization  64M × 8 configuration simplifies interfacing with parallel data buses and byte-oriented controllers.
• Compact FBGA package  60-FBGA (10 × 12.5 mm) offers a space-efficient footprint for high-density board layouts.
• Defined operating temperature  Specified 0 °C to 70 °C ambient range supports designs targeting commercial temperature requirements.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V64M8BN-5B:D TR positions itself as a straightforward DDR SDRAM building block for systems that require a 512 Mbit parallel memory solution with clear timing and power characteristics. Its 64M × 8 organization, 200 MHz operation, and compact 60-FBGA package make it suitable for designs where board space and deterministic DDR timing are important.

This device is well suited for engineers specifying on-board parallel DRAM with a defined voltage range and commercial temperature rating, providing a predictable memory element for integration into broader system designs.

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